ALL-SOLID SOURCE MOLECULAR-BEAM EPITAXY GROWTH OF 1.35 MU-M WAVELENGTH STRAINED-LAYER GALNASP QUANTUM-WELL LASER

被引：29
|
作者：
TOIVONEN, M [1 ]
SALOKATVE, A [1 ]
JALONEN, M [1 ]
NAPPI, J [1 ]
ASONEN, H [1 ]
PESSA, M [1 ]
MURISON, R [1 ]
机构：
[1] EG&G OPTOELECTR CANADA,VAUDREUIL,PQ J7V 8P7,CANADA
来源：
ELECTRONICS LETTERS | 1995年 / 31卷 / 10期
关键词：
MOLECULAR BEAM EPITAXIAL GROWTH; SEMICONDUCTOR JUNCTION LASERS; SEMICONDUCTOR QUANTUM WELLS;
D O I：
10.1049/el:19950526
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
The first GaInAsP based laser diode grown by ail solid source molecular beam epitaxy is reported. A strained-layer GaInAsP/InP separate confinement heterostructure multiquantum well laser emitting at 1.35 mu m was prepared. A low threshold current density of 510 A/cm(2) was obtained for a broad-area laser having a cavity length of 1300 mu m.
引用
收藏
页码：797 / 799
页数：3
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