MAGNETORESISTANCE OF N-GAAS AT FILAMENTARY CURRENT FLOW

被引：4

作者：

PROSHIN, SA ^{[1
]}

GOLUBEV, VG ^{[1
]}

WURFL, S ^{[1
]}

SPANGLER, J ^{[1
]}

SCHILZ, A ^{[1
]}

PRETTL, W ^{[1
]}

机构：

[1] UNIV REGENSBURG, INST ANGEW PHYS, W-8400 REGENSBURG, GERMANY

来源：

SEMICONDUCTOR SCIENCE AND TECHNOLOGY | 1993年 / 8卷 / 07期

关键词：

D O I：

10.1088/0268-1242/8/7/018

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

A large number of sharp structures are observed in the 4.2 K magnetoresistance of n-GaAs biased above impurity breakdown in a regime where current flow is filamentary. Most of the structures cannot be attributed to spectral properties of the semiconductor such as impact excitation of shallow donors or the magnetoimpurity effect. Experimental results give evidence that these structures are caused by a redistribution of the filamentary current flow when one filament border is swept across an imperfection in the material.

引用

页码：1298 / 1302

页数：5

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