CHARACTERISTICS OF POLYCRYSTALLINE FILMS GROWN BY ULTRAHIGH-VACUUM CHEMICAL-VAPOR-DEPOSITION SYSTEM

被引：0
|
作者：
LIN, HY
LEI, TF
LIN, HC
CHANG, CY
TWU, RC
DENG, RC
LIN, JD
机构：
[1] NATL NANO DEVICE LAB,HSINCHU 300,TAIWAN
[2] NATL CHIAO TUNG UNIV,INST ELECTROPHYS,HSINCHU 300,TAIWAN
[3] ELECTR RES & SERV ORG,IND TECHNOL RES INST,HSINCHU 310,TAIWAN
来源：
SOLID-STATE ELECTRONICS | 1995年 / 38卷 / 12期
关键词：
D O I：
10.1016/0038-1101(95)00030-W
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
In situ boron-doped polycrystalline Si1-xGex (poly-Si1-xGex) films deposited by ultrahigh vacuum chemical vapor deposition (UHV/CVD) system were characterized. Optimum fitted values of grain boundary trap state densities, 4.0 x 10(12) cm(-2) and 4.9 x 10(12) cm(-2) were obtained for poly-Si and poly-Si0.79Ge0.21, respectively. The extracted average carrier concentration in the grain agrees with secondary ion mass spectroscopy (SIMS) analysis. In turn, we found that these films are suitable Hall elements to sense magnetic field. Experimental results show that the sensitivity decreased with the increasing input current, which can be well explained using the thermionic emission theory. Finally, we use these films to fabricate thin film transistors.
引用
收藏
页码：2029 / 2033
页数：5
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