EFFECTS OF NITRIDE DEPOSITION CONDITIONS ON CHARACTERISTICS OF AN MNOS NON-VOLATILE MEMORY TRANSISTOR

被引：12
|
作者：
NAKAYAMA, H
ENOMOTO, T
机构：
来源：
JAPANESE JOURNAL OF APPLIED PHYSICS | 1979年 / 18卷 / 09期
关键词：
D O I：
10.1143/JJAP.18.1773
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
引用
收藏
页码：1773 / 1779
页数：7
相关论文
共 50 条
  • [31] Fabrication and characterization of non-volatile transistor memory based on polypeptide as gate dielectric
    Liang, Lijuan
    Li, LianFang
    Wei, Xianfu
    Huang, Beiqing
    Wei, Yen
    1ST INTERNATIONAL CONFERENCE ON NEW MATERIAL AND CHEMICAL INDUSTRY (NMCI2016), 2017, 167
  • [32] Volatile and Non-Volatile Single Electron Memory
    Touati, A.
    Kalboussi, A.
    JOURNAL OF NANO- AND ELECTRONIC PHYSICS, 2013, 5 (03)
  • [33] Lateral charge transport in the nitride layer of the NROM non-volatile memory device
    Shappir, A
    Shacham-Diamand, Y
    Lusky, E
    Bloom, I
    Eitan, B
    MICROELECTRONIC ENGINEERING, 2004, 72 (1-4) : 426 - 433
  • [34] Graphitic carbon nitride nanosheets for solution processed non-volatile memory devices
    Wang, Ruopeng
    Li, Huilin
    Zhang, Luhong
    Zeng, Yu-Jia
    Lv, Ziyu
    Yang, Jia-Qin
    Mao, Jing-Yu
    Wang, Zhanpeng
    Zhou, Ye
    Han, Su-Ting
    JOURNAL OF MATERIALS CHEMISTRY C, 2019, 7 (33) : 10203 - 10210
  • [35] METAL-NITRIDE-OXIDE-SILICON(MNOS) TRANSISTOR - CHARACTERISTICS AND APPLICATIONS
    FROHMANB.D
    PROCEEDINGS OF THE INSTITUTE OF ELECTRICAL AND ELECTRONICS ENGINEERS, 1970, 58 (08): : 1207 - +
  • [36] A sustainable biomass-based electret for face mask and non-volatile transistor memory
    Yeh, Jia-Hua
    Prakoso, Suhendro Purbo
    Santoso, Leon Lukhas
    Chen, Shi-Ju
    Chiang, Bryan
    Cheng, Ju-Chieh
    Zhang, Ru-Ning
    Chiu, Yu-Cheng
    ORGANIC ELECTRONICS, 2024, 124
  • [37] Sol-gel ZnO in organic transistor-based non-volatile memory
    Wu, Tianyi
    Aw, Kean C.
    Salim, Noviana Tjitra
    Gao, Wei
    JOURNAL OF MATERIALS SCIENCE-MATERIALS IN ELECTRONICS, 2010, 21 (02) : 125 - 129
  • [38] Temperature Effects on a Non-Volatile Memory Device with Ferroelectric Capacitor
    John, Caroline S.
    Macleod, Todd C.
    Evans, Joe
    Ho, Fat D.
    INTEGRATED FERROELECTRICS, 2014, 157 (01) : 23 - 30
  • [39] Results of radiation effects on a chalcogenide non-volatile memory array
    Maimon, J
    Hunt, K
    Rodgers, J
    Burcin, L
    Knowles, K
    2004 IEEE AEROSPACE CONFERENCE PROCEEDINGS, VOLS 1-6, 2004, : 2306 - 2315
  • [40] OVERVIEW OF RADIATION EFFECTS ON EMERGING NON-VOLATILE MEMORY TECHNOLOGIES
    Fetahovic, Irfan S.
    Dolicanin, Edin C.
    Lazarevic, Djordje R.
    Loncar, Boris B.
    NUCLEAR TECHNOLOGY & RADIATION PROTECTION, 2017, 32 (04): : 381 - 392
12345