DELOCALIZED EXCITON AND ELECTRON CONDUCTION VIA THE X-VALLEY IN GAAS/ALAS QUANTUM-WELLS

被引：8
|
作者：
DUTTA, M [1 ]
SMITH, DD [1 ]
NEWMAN, PG [1 ]
LIU, XC [1 ]
PETROU, A [1 ]
机构：
[1] SUNY BUFFALO, DEPT PHYS & ASTRON, BUFFALO, NY 14260 USA
来源：
PHYSICAL REVIEW B | 1990年 / 42卷 / 02期
关键词：
D O I：
10.1103/PhysRevB.42.1474
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
The results of magnetoreflection, photoluminescence, and photoluminescence excitation experiments are reported in GaAs-AlAs multiple quantum wells of different well widths, demonstrating the influence of the X band in the AlAs on the electron levels in GaAs. Evidence is presented for the existence of an exciton formed from a delocalized electron, and for the conduction of electrons from narrow wells to wide wells via the X band of AlAs. © 1990 The American Physical Society.
引用
收藏
页码：1474 / 1477
页数：4
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