ELECTRICAL-PROPERTIES OF GRAIN-BOUNDARIES IN CERAMIC COMPONENTS FOR ELECTRONICS

被引：0
|
作者：
HISHITA, S
PROVOST, F
GUERIN, O
ABELARD, P
机构：
[1] ECOLE NATL SCUPER CHIM IND,CNRS,UA 320,47 AVE ALBERT THOMAS,F-87065 LIMOGES,FRANCE
[2] NATL INST RES INORGAN MAT,TSUKUBA,IBARAKI 305,JAPAN
来源：
ANNALES DE CHIMIE-SCIENCE DES MATERIAUX | 1991年 / 16卷 / 4-6期
关键词：
D O I：
暂无
中图分类号：
O6 [化学];
学科分类号：
0703 ;
摘要：
Many oxides and carbides can be made semiconducting by doping. In polycrystalline materials, trapping of charge at the grain boundaries makes them insulating through the formation of double Schottky barriers. Several components like voltage arresters, PTCR thermistors exist which use this specific effect. The electrical properties of the interfaces are briefly presented. Then, the influence of the heterogeneity of the microstructure is discussed. In particular, it is explained why the sample becomes electrically homogeneous under an increasing applied voltage.
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页码：453 / 462
页数：10
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