HIGH-QUALITY HOMOEPITAXIAL SILICON FILMS DEPOSITED BY RAPID THERMAL CHEMICAL VAPOR-DEPOSITION

被引：37
|
作者：
GREEN, ML [1 ]
BRASEN, D [1 ]
LUFTMAN, H [1 ]
KANNAN, VC [1 ]
机构：
[1] AT&T BELL LABS,ALLENTOWN,PA 18103
来源：
JOURNAL OF APPLIED PHYSICS | 1989年 / 65卷 / 06期
关键词：
D O I：
10.1063/1.342782
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
引用
收藏
页码：2558 / 2560
页数：3
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