ROOM-TEMPERATURE OPERATION OF ALGAAS/GAAS RESONANT TUNNELLING STRUCTURES GROWN BY METALORGANIC VAPOR-PHASE EPITAXY

被引：6
|
作者：
SCHNELL, RD
TEWS, H
NEUMANN, R
机构：
来源：
ELECTRONICS LETTERS | 1989年 / 25卷 / 13期
关键词：
D O I：
10.1049/el:19890559
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
引用
收藏
页码：830 / 831
页数：2
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