CHEMICAL ETCHING OF SILICON .2. THE SYSTEM HF, HNO3, H2O, AND HC2H3O2

被引:181
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作者
ROBBINS, H
SCHWARTZ, B
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D O I
10.1149/1.2427617
中图分类号
O646 [电化学、电解、磁化学];
学科分类号
081704 ;
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页码:108 / 111
页数:4
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