VARIATIONS OF INTERLAYER STRUCTURE IN CUXS/CDS BILAYER THIN-FILM WITH ANNEALING OF CDS - AN ELLIPSOMETRIC STUDY

被引：6
|
作者：
VIJAYAKUMAR, KP
机构：
[1] Department of Physics, Cochin University of Science and Technology, Cochin
来源：
BULLETIN OF MATERIALS SCIENCE | 1991年 / 14卷 / 01期
关键词：
CUXS/CDS; INTERLAYER ELLIPSOMETRY; EFFECTIVE MEDIUM THEORY; CHEMIPLATING;
D O I：
10.1007/BF02745089
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
Irregularities at the interface in Cu(x)S/CdS thin films can be controlled by annealing CdS film prior to chemiplating. The interlayer formed on CdS films annealed at 200-degrees-C is comparatively smooth. In CdS films annealed at higher temperatures, the interlayer is rather thick and the CdS intrusions into this layer are thin. An ellipsometric technique is used for this study and the effective medium theory which is utilized to interpret the results is based on the difference in reaction rate in the grains as well as grain boundaries during chemiplating.
引用
收藏
页码：57 / 63
页数：7
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