N-TYPE NEGATIVE DIFFERENTIAL CONDUCTIVITY AT MAGNETOCONCENTRATION EFFECT, RESULTING FROM AUGER GENERATION OF CARRIERS IN NARROW-GAP SEMICONDUCTORS

被引：2
|
作者：
AKOPYAN, AA
BOLGOV, SS
MALYUTENKO, VK
SAVCHENKO, AP
机构：
[1] Institute of Semiconductors, Kiev
来源：
PHYSICA B | 1990年 / 162卷 / 03期
关键词：
D O I：
10.1016/0921-4526(90)90019-Q
中图分类号：
O469 [凝聚态物理学];
学科分类号：
070205 ;
摘要：
The theory of the magnetoconcentration effect in a narrow-gap semiconductor, where the processes of Auger generation and recombination of carriers are predominating, has been developed. An N-type dropping portion has been shown to appear in the I-U characteristics. The effect has been experimentally studied in Cd0.2Hg0.8Te films; the existence of an N-type portion in the I-U characteristics manifested itself in instability of the current through the sample and origination of current oscillations in the sample. The ratio of a double amplitude of oscillations of the current to the average value of the latter reached 50%. © 1990.
引用
收藏
页码：243 / 253
页数：11
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