N-TYPE NEGATIVE DIFFERENTIAL CONDUCTIVITY AT MAGNETOCONCENTRATION EFFECT, RESULTING FROM AUGER GENERATION OF CARRIERS IN NARROW-GAP SEMICONDUCTORS

The theory of the magnetoconcentration effect in a narrow-gap semiconductor, where the processes of Auger generation and recombination of carriers are predominating, has been developed. An N-type dropping portion has been shown to appear in the I-U characteristics. The effect has been experimentally studied in Cd0.2Hg0.8Te films; the existence of an N-type portion in the I-U characteristics manifested itself in instability of the current through the sample and origination of current oscillations in the sample. The ratio of a double amplitude of oscillations of the current to the average value of the latter reached 50%. © 1990.