ELECTRONIC STATES AT UNRELAXED AND RELAXED GAAS (110) SURFACES

被引：74

作者：

MELE, EJ

JOANNOPOULOS, JD

机构：

来源：

PHYSICAL REVIEW B | 1978年 / 17卷 / 04期

关键词：

D O I：

10.1103/PhysRevB.17.1816

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

引用

页码：1816 / 1827

页数：12

共 27 条

[1] SURFACE-POTENTIAL, CHARGE-DENSITY, AND IONIZATION-POTENTIAL FOR SI(111) - SELF-CONSISTENT CALCULATION [J].

APPELBAUM, JA ;

HAMANN, DR .

PHYSICAL REVIEW LETTERS, 1974, 32 (05) :225-228

[2] ELECTRONIC-STRUCTURE AND ATOMIC CONFIGURATION AT CLEAVAGE SURFACE OF ZINCBLENDE COMPOUNDS [J].

CALANDRA, C ;

MANGHI, F ;

BERTONI, CM .

JOURNAL OF PHYSICS C-SOLID STATE PHYSICS, 1977, 10 (11) :1911-1927

[3] SURFACE STATES OF (110) SURFACE OF GAAS [J].

CALANDRA, C ;

SANTORO, G .

JOURNAL OF PHYSICS C-SOLID STATE PHYSICS, 1975, 8 (06) :L86-L89

[4] INTRINSIC (111) SURFACE STATES OF GE, GAAS, AND ZNSE [J].

CHADI, DJ ;

COHEN, ML .

PHYSICAL REVIEW B, 1975, 11 (02) :732-737

[5]

CHADI DJ, UNPUBLISHED

[6] NONLOCAL PSEUDOPOTENTIAL CALCULATIONS FOR ELECTRONIC-STRUCTURE OF 11 DIAMOND AND ZINCBLENDE SEMICONDUCTORS [J].

CHELIKOWSKY, JR ;

COHEN, ML .

PHYSICAL REVIEW B, 1976, 14 (02) :556-582

[7] RELAXATION EFFECTS ON (110) SURFACE OF GAAS [J].

CHELIKOWSKY, JR ;

LOUIE, SG ;

COHEN, ML .

PHYSICAL REVIEW B, 1976, 14 (10) :4724-4726

[8] RELATION OF SCHOTTKY BARRIERS TO EMPTY SURFACE STATES ON 3-5 SEMICONDUCTORS [J].

EASTMAN, DE ;

FREEOUF, JL .

PHYSICAL REVIEW LETTERS, 1975, 34 (26) :1624-1627

[9]

FALICOV LM, 1975, J PHYS C SOLID STATE, V8, P147, DOI 10.1088/0022-3719/8/2/009

[10] LOW-ENERGY ELECTRON DIFFRACTION STUDY OF VACUUM-CLEAVED (110) CADMIUM TELLURIDE [J].

FEINSTEIN, LG ;

SHOEMAKER, DP .

SURFACE SCIENCE, 1965, 3 (03) :294-+

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