PHOTOINDUCED INTERSUBBAND ABSORPTION IN NORMAL-DOPED QUANTUM-WELLS

被引：0

作者：

GARINI, Y ^{[1
]}

COHEN, E ^{[1
]}

RON, A ^{[1
]}

EHRENFREUND, E ^{[1
]}

LAW, KK ^{[1
]}

MERZ, JL ^{[1
]}

GOSSARD, AC ^{[1
]}

机构：

[1] UNIV CALIF SANTA BARBARA,CTR QUANTIZED ELECTR STRUCT QUEST,SANTA BARBARA,CA 93106

来源：

JOURNAL OF LUMINESCENCE | 1992年 / 53卷 / 1-6期

基金：

美国国家科学基金会;

关键词：

D O I：

10.1016/0022-2313(92)90158-6

中图分类号：

O43 [光学];

学科分类号：

070207 ; 0803 ;

摘要：

We report on the study of Si-doped GaAs/AlGaAs narrow multiquantum wells (MQWs) using the intersubband photoinduced absorption technique. For the barrier-doped MQWs, we find that an impurity level which is approximately 60 meV below the barrier band gap, causes a photoinduced reduction ("bleaching") in the e1-e2 intersubband absorption. This is not observed for the MQWs doped in the well. For a Si-doped level of approximately 2.5 X 10(16) cm-3 (in the barriers), we estimate the density of the impurities causing the bleaching to be of the order of 2 X 10(8) cm-2 per barrier.

引用

页码：288 / 292

页数：5

共 50 条

[11] PHOTOINDUCED INTERSUBBAND ADSORPTION IN N-TYPE WELL-DOPED AND BARRIER-DOPED QUANTUM-WELLS
GARINI, Y
COHEN, E
EHRENFREUND, E
RON, A
LAW, KK
MERZ, JL
GOSSARD, AC
SURFACE SCIENCE, 1992, 263 (1-3) : 561 - 564
[12] SATURATION OF INTERSUBBAND ABSORPTION AND OPTICAL RECTIFICATION IN ASYMMETRIC QUANTUM-WELLS
ZALUZNY, M
JOURNAL OF APPLIED PHYSICS, 1993, 74 (07) : 4716 - 4722
[13] OPTICALLY INDUCED INTERSUBBAND ABSORPTION IN BIASED DOUBLE QUANTUM-WELLS
BERGER, V
VODJDANI, N
VINTER, B
COSTARD, E
BOCKENHOFF, E
APPLIED PHYSICS LETTERS, 1992, 60 (15) : 1869 - 1871
[14] TUNNELING ASSISTED MODULATION OF THE INTERSUBBAND ABSORPTION IN DOUBLE QUANTUM-WELLS
VODJDANI, N
VINTER, B
BERGER, V
BOCKENHOFF, E
COSTARD, E
APPLIED PHYSICS LETTERS, 1991, 59 (05) : 555 - 557
[15] ON THE INTERSUBBAND ABSORPTION-LINE WIDTH IN SEMICONDUCTOR QUANTUM-WELLS
ZALUZNY, M
SOLID STATE COMMUNICATIONS, 1992, 82 (07) : 565 - 567
[16] TEMPERATURE-DEPENDENCE OF THE INTERSUBBAND TRANSITIONS OF DOPED QUANTUM-WELLS
GUMBS, G
HUANG, DH
LOEHR, JP
PHYSICAL REVIEW B, 1995, 51 (07): : 4321 - 4328
[17] BOUND-FREE INTERSUBBAND ABSORPTION IN P-TYPE DOPED SEMICONDUCTOR QUANTUM-WELLS
TADIC, M
IKONIC, Z
PHYSICAL REVIEW B, 1995, 52 (11) : 8266 - 8275
[18] ABSORPTION AND RESONANT DISPERSION ASSOCIATED WITH NORMAL INCIDENCE INTERSUBBAND TRANSITIONS IN SI/SIGE QUANTUM-WELLS
WU, L
BOUCAUD, P
LOURTIOZ, JM
JULIEN, FH
SAGNES, I
CAMPIDELLI, Y
BADOZ, PA
APPLIED PHYSICS LETTERS, 1995, 67 (23) : 3462 - 3464
[19] CURRENT-INDUCED INTERSUBBAND ABSORPTION IN GAAS/GAALAS QUANTUM-WELLS
FENIGSTEIN, A
FRAENKEL, A
FINKMAN, E
BAHIR, G
SCHACHAM, SE
APPLIED PHYSICS LETTERS, 1995, 66 (19) : 2513 - 2515
[20] CALCULATION OF THE INTERSUBBAND ABSORPTION STRENGTH IN ELLIPSOIDAL-VALLEY QUANTUM-WELLS
BROWN, ER
EGLASH, SJ
PHYSICAL REVIEW B, 1990, 41 (11) : 7559 - 7568

← 1 2 3 4 5 →