HIGH-POWER 11 GHZ AMPLIFIER USING HIGH-EFFICIENCY IMPATT DIODES

被引：2

|

作者：

THORPE, W

HUISH, P

机构：

来源：

ELECTRONICS LETTERS | 1978年 / 14卷 / 16期

关键词：

D O I：

10.1049/el:19780341

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

收藏

页码：508 / 509

页数：2

相关论文

共 50 条

[31] READ VERSUS FLAT DOPING PROFILE STRUCTURES FOR THE REALIZATION OF RELIABLE HIGH-POWER, HIGH-EFFICIENCY 94 GHZ IMPATT SOURCES
DALLE, C
ROLLAND, PA
IEEE TRANSACTIONS ON MICROWAVE THEORY AND TECHNIQUES, 1990, 38 (04) : 366 - 372
[32] HIGH-POWER OPERATION MODE OF PULSED IMPATT DIODES
BEHR, W
LUY, JF
IEEE ELECTRON DEVICE LETTERS, 1990, 11 (05) : 206 - 208
[33] HIGH-POWER IMPATT DIODES UTILIZING ION IMPLANTATION
MANKARIO.RG
YING, RS
BOWER, RW
ENGLISH, DL
IEEE TRANSACTIONS ON ELECTRON DEVICES, 1968, ED15 (06) : 415 - &
[34] HIGH-POWER IMPATT DIODES ON DIAMOND HEAT SINKS
DECKER, DR
SCHORR, AJ
IEEE TRANSACTIONS ON ELECTRON DEVICES, 1970, ED17 (09) : 739 - +
[35] HIGH-EFFICIENCY DIFFUSED GAAS FLAT-PROFILE IMPATT DIODES AT 18GHZ
KUPPER, P
FREYER, J
INTERNATIONAL JOURNAL OF ELECTRONICS, 1979, 47 (05) : 469 - 474
[36] 20-GHZ, HIGH-POWER IMPATT TRANSMITTER
NGAN, YC
MICROWAVES & RF, 1983, 22 (05) : 107 - 107
[37] HIGH-POWER HIGH-EFFICIENCY OPERATION OF READ-TYPE IMPATT-DIODE OSCILLATORS
KIM, C
STEELE, R
BIERIG, R
ELECTRONICS LETTERS, 1973, 9 (8-9) : 173 - 174
[38] High-Efficiency Power Amplifier
Nemati, Hossein Mashad
Saad, Paul
Fager, Christian
Andersson, Kristoffer
IEEE MICROWAVE MAGAZINE, 2011, 12 (01) : 81 - 84
[39] HIGH-POWER C BAND READ IMPATT DIODES
ADLERSTEIN, MG
WALLACE, RN
STEELE, SR
ELECTRONICS LETTERS, 1975, 11 (18) : 430 - 431
[40] HIGH-POWER PARALLEL-ARRAY IMPATT DIODES
COWLEY, AM
PATTERSON, RC
ELECTRONICS LETTERS, 1971, 7 (11) : 301 - +

← 1 2 3 4 5 →