HIGH-POWER 11 GHZ AMPLIFIER USING HIGH-EFFICIENCY IMPATT DIODES

被引:2
|
作者
THORPE, W
HUISH, P
机构
关键词
D O I
10.1049/el:19780341
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
引用
收藏
页码:508 / 509
页数:2
相关论文
共 50 条
  • [1] HIGH-POWER MICROWAVE AMPLIFIER USING IMPATT DIODES
    BAINS, AS
    ELECTRONICS LETTERS, 1972, 8 (16) : 427 - &
  • [2] High-power, high-efficiency cell design for 26 GHz HBT power amplifier
    Tanaka, S
    Murakami, S
    Amamiya, Y
    Shimawaki, H
    Furuhata, N
    Goto, N
    Honjo, K
    Ishida, Y
    Saito, Y
    Yamamoto, K
    Yajima, M
    Temino, R
    Hisada, Y
    1996 IEEE MTT-S INTERNATIONAL MICROWAVE SYMPOSIUM DIGEST, VOLS 1-3, 1996, : 843 - 846
  • [3] A high-power and high-efficiency monolithic power amplifier at 28 GHz for LMDS applications
    Siddiqui, MK
    Sharma, AK
    Callejo, LG
    Lai, R
    IEEE TRANSACTIONS ON MICROWAVE THEORY AND TECHNIQUES, 1998, 46 (12) : 2226 - 2232
  • [4] OPTIMUM DESIGN FOR HIGH-POWER AND HIGH-EFFICIENCY GAAS HI-LO IMPATT DIODES
    NISHITANI, K
    SAWANO, H
    ISHIHARA, O
    ISHII, T
    MITSUI, S
    IEEE TRANSACTIONS ON ELECTRON DEVICES, 1979, 26 (03) : 210 - 214
  • [5] HIGH-EFFICIENCY AND HIGH-POWER GUNN DIODES
    TANAKA, S
    JAPANESE JOURNAL OF APPLIED PHYSICS, 1975, 14 (01) : 76 - 81
  • [6] HIGH-POWER 60 GHZ MONOLITHIC GAAS IMPATT DIODES
    BAYRAKTAROGLU, B
    SHIH, HD
    ELECTRONICS LETTERS, 1986, 22 (10) : 562 - 563
  • [7] HIGH-EFFICIENCY OPERATION OF IMPATT DIODES
    SCHARFET.DL
    IEEE TRANSACTIONS ON ELECTRON DEVICES, 1969, ED16 (02) : 234 - &
  • [8] HIGH-POWER AND HIGH-EFFICIENCY GAAS AVALANCHE DIODES
    KIM, C
    ARMSTRON.LD
    APPLIED PHYSICS LETTERS, 1969, 14 (09) : 270 - &
  • [9] HIGH-POWER GAAS IMPATT AMPLIFIER
    NISHITANI, K
    SAWANO, H
    ISHII, T
    MITSUI, S
    KAJI, E
    AMANO, A
    IEEE TRANSACTIONS ON MICROWAVE THEORY AND TECHNIQUES, 1977, 25 (12) : 973 - 977
  • [10] NASA SEEKING HIGH-POWER 60-GHZ IMPATT DIODES
    HAUGLAND, EJ
    MICROWAVES & RF, 1984, 23 (08) : 100 - &