共 50 条
- [21] Reappraisal of Conduction and Hall Effect Due to Impurity Hubbard Bands in Weakly Compensated n-GaAs PHYSICA STATUS SOLIDI B-BASIC SOLID STATE PHYSICS, 2018, 255 (08):
- [22] MAGNETORESISTANCE AND HALL-EFFECT OF WARM AND NONEQUILIBRIUM ELECTRONS IN HIGH-PURITY N-GAAS PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE, 1994, 144 (02): : 377 - 382
- [24] The influence of anodic oxide on the electron concentration in n-GaAs Russian Physics Journal, 2014, 56 : 984 - 989
- [27] ELECTRICAL AND INTERFACIAL CHARACTERISTICS OF NIAS/N-GAAS, NIAS/GE/N-GAAS AND GE/NIAS/N-GAAS STRUCTURES INSTITUTE OF PHYSICS CONFERENCE SERIES, 1991, (117): : 269 - 274
- [29] Electric field effect on the emission of electron-irradiation-induced defects in n-GaAs Goodman, Stewart A., 1949, JJAP, Minato-ku, Japan (33):
- [30] The effect of ultrasonic treatment on the energy spectrum of electron traps in n-GaAs single crystals Technical Physics Letters, 2015, 41 : 362 - 365