EFFECT OF ELECTRON HEATING ON HALL COEFFICIENT IN N-GAAS

被引:2
|
作者
MUKHERJEE, MN
KAR, RK
机构
关键词
D O I
10.1016/0375-9601(68)90488-X
中图分类号
O4 [物理学];
学科分类号
0702 ;
摘要
引用
收藏
页码:447 / +
页数:1
相关论文
共 50 条
  • [21] Reappraisal of Conduction and Hall Effect Due to Impurity Hubbard Bands in Weakly Compensated n-GaAs
    Kajikawa, Yasutomo
    PHYSICA STATUS SOLIDI B-BASIC SOLID STATE PHYSICS, 2018, 255 (08):
  • [22] MAGNETORESISTANCE AND HALL-EFFECT OF WARM AND NONEQUILIBRIUM ELECTRONS IN HIGH-PURITY N-GAAS
    LUKASHEVICH, MG
    BOGERSHAUSEN, M
    MICKLITZ, H
    PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE, 1994, 144 (02): : 377 - 382
  • [23] The influence of anodic oxide on the electron concentration in n-GaAs
    Kalygina, V. M.
    Vishnikina, V. V.
    Zarubin, A. N.
    Petrova, Yu S.
    Skakunov, M. S.
    Tolbanov, O. P.
    Tyazhev, A. V.
    Yaskevich, T. M.
    RUSSIAN PHYSICS JOURNAL, 2014, 56 (09) : 984 - 989
  • [24] The influence of anodic oxide on the electron concentration in n-GaAs
    V. M. Kalygina
    V. V. Vishnikina
    А. N. Zarubin
    Yu. S. Petrova
    М. S. Skakunov
    О. P. Тоlbanov
    А. V. Тyazhev
    Т. М. Yaskevich
    Russian Physics Journal, 2014, 56 : 984 - 989
  • [25] 1/F-NOISE IN THE HALL VOLTAGE OF EPITAXIAL N-GAAS
    REN, L
    LIBERIS, JS
    PHYSICA B, 1993, 183 (1-2): : 40 - 44
  • [26] LEAKAGE EFFECTS IN N-GAAS MESFET WITH N-GAAS BUFFER LAYER
    WANG, YC
    BAHRAMI, M
    INTERNATIONAL JOURNAL OF ELECTRONICS, 1984, 57 (05) : 647 - 663
  • [27] ELECTRICAL AND INTERFACIAL CHARACTERISTICS OF NIAS/N-GAAS, NIAS/GE/N-GAAS AND GE/NIAS/N-GAAS STRUCTURES
    RAI, RS
    MAHAJAN, S
    HARBISON, JP
    SANDS, T
    GENUT, M
    CHEEKS, TL
    KERAMIDAS, VG
    INSTITUTE OF PHYSICS CONFERENCE SERIES, 1991, (117): : 269 - 274
  • [28] ELECTRON-IRRADIATION EFFECT ON EMISSION BAND ASSOCIATED WITH CARBON ACCEPTORS IN N-GAAS
    JEONG, M
    SHIRAFUJI, J
    INUISHI, Y
    JAPANESE JOURNAL OF APPLIED PHYSICS, 1981, 20 (04) : 795 - 796
  • [29] Electric field effect on the emission of electron-irradiation-induced defects in n-GaAs
    Goodman, Stewart A., 1949, JJAP, Minato-ku, Japan (33):
  • [30] The effect of ultrasonic treatment on the energy spectrum of electron traps in n-GaAs single crystals
    F. S. Gabibov
    E. M. Zobov
    M. E. Zobov
    S. P. Kramynin
    E. G. Pashuk
    Sh. A. Khalilov
    Technical Physics Letters, 2015, 41 : 362 - 365