GAIN-COUPLED DISTRIBUTED FEEDBACK SEMICONDUCTOR-LASERS WITH AN ABSORPTIVE CONDUCTION-TYPE INVERTED GRATING

被引：33
|
作者：
LUO, Y [1 ]
CAO, HL [1 ]
DOBASHI, M [1 ]
HOSOMATSU, H [1 ]
NAKANO, Y [1 ]
TADA, K [1 ]
机构：
[1] UNIV TOKYO,DEPT ELECTR ENGN,TOKYO 113,JAPAN
来源：
IEEE PHOTONICS TECHNOLOGY LETTERS | 1992年 / 4卷 / 07期
关键词：
14;
D O I：
10.1109/68.145240
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
A gain-coupled (GC) distributed feedback (DFB) semiconductor laser with an absorptive conduction-type-inverted grating is proposed. Devices based on GaAlAs / GaAs materials are fabricated using two-step OMVPE. By inverting the conduction type of the absorptive region, threshold current is lowered by 10 mA, which is to compensate the threshold increase due to extra absorption. In addition, nonlinear output property associated with the saturable nature of the absorption is eliminated. An ultralow chirping capability under gain switching high speed modulation and narrow linewidth nature of this laser are experimentally studied.
引用
收藏
页码：692 / 695
页数：4
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