DEEP ELECTRON TRAPS IN HYDROGENATED AMORPHOUS-SILICON

被引：74
|
作者：
CRANDALL, RS
机构：
来源：
PHYSICAL REVIEW B | 1981年 / 24卷 / 12期
关键词：
D O I：
10.1103/PhysRevB.24.7457
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
引用
收藏
页码：7457 / 7459
页数：3
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