CAPTURE OF IMPURITY ATOMS BY VACANCIES IN IMPLANTED LAYERS

被引：0

作者：

ZELEVINS.VM ^{[1
]}

KACHURIN, GA ^{[1
]}

BOGOMYAK.NP ^{[1
]}

AZIKOV, BS ^{[1
]}

SHIROKOV, LL ^{[1
]}

机构：

[1] ACAD SCI USSR,SEMICOND PHYS INST,NOVOSIBIRSK,USSR

来源：

SOVIET PHYSICS SEMICONDUCTORS-USSR | 1974年 / 8卷 / 02期

关键词：

D O I：

暂无

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

引用

页码：164 / 166

页数：3

共 50 条

[1] CAPTURE OF IMPURITY ATOMS BY VACANCIES IN IMPLANTED LAYERS.
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