SUBBAND STRUCTURES AND INTERSUBBAND OPTICAL-TRANSITIONS IN LATERAL SURFACE SUPERLATTICES UNDER ELECTRIC-FIELDS

被引：0
|
作者：
LIN, XM [2 ]
SUN, H
机构：
[1] CHINA CTR ADV SCI & TECHNOL,CTR THEORET PHYS,WORLD LAB,BEIJING 100080,PEOPLES R CHINA
[2] SHANGHAI JIAO TONG UNIV,DEPT PHYS,SHANGHAI,PEOPLES R CHINA
[3] SHANGHAI JIAO TONG UNIV,INST CONDENSED MATTER PHYS,SHANGHAI 200030,PEOPLES R CHINA
来源：
PHYSICS LETTERS A | 1994年 / 184卷 / 03期
关键词：
D O I：
10.1016/0375-9601(94)90395-6
中图分类号：
O4 [物理学];
学科分类号：
0702 ;
摘要：
Subband structures of two-dimensional electronic gases modulated by lateral periodic potentials arise from periodically structured interfaces, such as those produced by the deposition of AlAs and GaAs fractional layers on (001) vicinal GaAs substrates under normally applied electric fields, are studied by variational numerical calculations. The results show that minigaps of electronic subbands, the density of states and the optical absorption peaks associated with electronic intersubband transitions of the systems depend sensitively on the applied electric fields.
引用
收藏
页码：305 / 309
页数：5
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