DEFECTS IN ELECTRON-IRRADIATED CDSNAS2 CRYSTALS

被引:4
|
作者
BRUDNYI, VN
VOEVODIN, VG
VOEVODINA, OV
KRIVOV, MA
机构
来源
关键词
D O I
10.1002/pssa.2210620117
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
引用
收藏
页码:155 / 162
页数:8
相关论文
共 50 条
  • [41] STRUCTURE OF CONDUCTION BRAND CDSNAS2
    MALTSEV, YV
    POLYANSK.TA
    SIKHARUL.GA
    TUCHKEVI.VM
    UKHANOV, YI
    SHMARTSE.YV
    SOVIET PHYSICS SEMICONDUCTORS-USSR, 1968, 1 (10): : 1319 - &
  • [42] CERTAIN PROPERTIES OF CDSNAS2 SEMICONDUCTOR - AN ELECTRON ANALOGUE OF INDIUM ARSENIDE
    GORIUNOVA, NA
    MAMAEV, S
    PROCHUKHAN, VD
    DOKLADY AKADEMII NAUK SSSR, 1962, 142 (03): : 623 - &
  • [43] ANISOTROPY OF CONDUCTION BAND IN CDSNAS2
    POLYANSKAYA, TA
    ZIMKIN, IN
    TUCHKEVI.VM
    SHMARTSE.YV
    SOVIET PHYSICS SEMICONDUCTORS-USSR, 1969, 2 (10): : 1215 - +
  • [44] PROPERTIES OF ZNSNAS2 AND CDSNAS2
    GASSON, DB
    PARROTT, JE
    JENNINGS, IC
    HOLMES, PJ
    MARATHE, BR
    JOURNAL OF PHYSICS AND CHEMISTRY OF SOLIDS, 1962, 23 (SEP) : 1291 - &
  • [45] BEHAVIOUR OF PRIMARY DEFECTS IN ELECTRON-IRRADIATED GERMANIUM
    BOURGOIN, J
    MOLLOT, F
    PHYSICA STATUS SOLIDI B-BASIC RESEARCH, 1971, 43 (01): : 343 - &
  • [46] Defects at nitrogen site in electron-irradiated AlN
    Son, N. T.
    Gali, A.
    Szabo, A.
    Bickermann, M.
    Ohshima, T.
    Isoya, J.
    Janzen, E.
    APPLIED PHYSICS LETTERS, 2011, 98 (24)
  • [47] Hydrogen interaction with defects in electron-irradiated silicon
    Feklisova, O
    Yarykin, N
    Yakimov, E
    Weber, J
    PHYSICA B-CONDENSED MATTER, 1999, 273-4 : 235 - 238
  • [48] POINT-DEFECTS IN ELECTRON-IRRADIATED ZNS
    LOCKER, DR
    MEESE, JM
    BULLETIN OF THE AMERICAN PHYSICAL SOCIETY, 1975, 20 (03): : 319 - 319
  • [49] THE NATURE OF DEFECTS IN ELECTRON-IRRADIATED AND DEFORMED INDIUM
    DELRIO, J
    PLAZAOLA, F
    DEDIEGO, N
    MOSER, P
    SOLID STATE COMMUNICATIONS, 1994, 89 (11) : 913 - 915
  • [50] DEFECTS IN ELECTRON-IRRADIATED AL-ZN
    HULTMAN, KL
    HOLDER, J
    GRANATO, AV
    BULLETIN OF THE AMERICAN PHYSICAL SOCIETY, 1979, 24 (03): : 242 - 242