PHOTOMAGNETOELECTRIC EFFECT IN GRADED BAND-GAP SEMICONDUCTORS

被引：20
|
作者：
CHATTOPADHYAYA, SK
MATHUR, VK
机构：
来源：
PHYSICAL REVIEW B-SOLID STATE | 1971年 / 3卷 / 10期
关键词：
D O I：
10.1103/PhysRevB.3.3390
中图分类号：
O469 [凝聚态物理学];
学科分类号：
070205 ;
摘要：
引用
收藏
页码：3390 / +
页数：1
相关论文
共 50 条
  • [21] TEMPERATURE-DEPENDENCE OF BAND-GAP IN SEMICONDUCTORS
    BAUMANN, K
    PHYSICA STATUS SOLIDI B-BASIC RESEARCH, 1974, 63 (01): : K71 - K74
  • [22] EFFECT OF MISMATCH STRAIN ON BAND-GAP IN III-V SEMICONDUCTORS
    KUO, CP
    VONG, SK
    COHEN, RM
    STRINGFELLOW, GB
    JOURNAL OF APPLIED PHYSICS, 1985, 57 (12) : 5428 - 5432
  • [23] TRANSFER MECHANISMS OF NON-EQUILIBRIUM CHARGE-CARRIERS IN GRADED BAND-GAP SEMICONDUCTORS
    BASYK, AI
    KOVALENKO, VF
    PEKA, GP
    PHYSICA STATUS SOLIDI A-APPLIED RESEARCH, 1983, 76 (02): : 429 - 435
  • [24] Effective absorption coefficient for graded band-gap semiconductors and the expected photocurrent density in solar cells
    Morales-Acevedo, Arturo
    SOLAR ENERGY MATERIALS AND SOLAR CELLS, 2009, 93 (01) : 41 - 44
  • [25] Deep defect states in narrow band-gap semiconductors
    Mahanti, S. D.
    Hoang, Khang
    Ahmad, Salameh
    PHYSICA B-CONDENSED MATTER, 2007, 401 (291-295) : 291 - 295
  • [26] BAND-GAP RENORMALIZATION IN SEMICONDUCTORS WITH MULTIPLE INEQUIVALENT VALLEYS
    KALT, H
    RINKER, M
    PHYSICAL REVIEW B, 1992, 45 (03): : 1139 - 1154
  • [27] PROSPECTS FOR DEVICE IMPLEMENTATION OF WIDE BAND-GAP SEMICONDUCTORS
    EDGAR, JH
    JOURNAL OF MATERIALS RESEARCH, 1992, 7 (01) : 235 - 252
  • [28] Origins of band-gap renormalization in degenerately doped semiconductors
    Walsh, Aron
    Da Silva, Juarez L. F.
    Wei, Su-Huai
    PHYSICAL REVIEW B, 2008, 78 (07)
  • [29] A THEORY OF BAND-GAP FLUCTUATIONS IN AMORPHOUS-SEMICONDUCTORS
    ROBERTS, M
    DUNSTAN, DJ
    JOURNAL OF PHYSICS C-SOLID STATE PHYSICS, 1985, 18 (28): : 5429 - 5433
  • [30] DIELECTRIC SCREENING APPROACH TO THE AVERAGE BAND-GAP OF SEMICONDUCTORS
    DEVREESE, JT
    VANCAMP, PE
    VANDOREN, VE
    BULLETIN OF THE AMERICAN PHYSICAL SOCIETY, 1980, 25 (03): : 418 - 418
12345