PHOTOADMITTANCE IN AMORPHOUS-SILICON SCHOTTKY DIODES

被引：0
|
作者：
DRAZIN, JPV [1 ]
ANDERSON, JC [1 ]
机构：
[1] UNIV LONDON IMPERIAL COLL SCI & TECHNOL,DEPT ELECT ENGN,LONDON SW7 2BT,ENGLAND
来源：
PHILOSOPHICAL MAGAZINE B-PHYSICS OF CONDENSED MATTER STATISTICAL MECHANICS ELECTRONIC OPTICAL AND MAGNETIC PROPERTIES | 1986年 / 54卷 / 01期
关键词：
D O I：
10.1080/13642818608243175
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
引用
收藏
页码：19 / 36
页数：18
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