PHOTOADMITTANCE IN AMORPHOUS-SILICON SCHOTTKY DIODES

被引：0
|
作者：
DRAZIN, JPV [1 ]
ANDERSON, JC [1 ]
机构：
[1] UNIV LONDON IMPERIAL COLL SCI & TECHNOL,DEPT ELECT ENGN,LONDON SW7 2BT,ENGLAND
来源：
PHILOSOPHICAL MAGAZINE B-PHYSICS OF CONDENSED MATTER STATISTICAL MECHANICS ELECTRONIC OPTICAL AND MAGNETIC PROPERTIES | 1986年 / 54卷 / 01期
关键词：
D O I：
10.1080/13642818608243175
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
引用
收藏
页码：19 / 36
页数：18
相关论文
共 50 条
  • [1] PHOTOADMITTANCE IN AMORPHOUS-SILICON SCHOTTKY DIODES.
    Drazin, J.P.V.
    Anderson, J.C.
    Philosophical Magazine B: Physics of Condensed Matter; Electronic, Optical and Magnetic Properties, 1986, 54 (01): : 19 - 36
  • [2] FLICKER NOISE IN HYDROGENATED AMORPHOUS-SILICON SCHOTTKY DIODES
    BATHAEI, FZ
    ANDERSON, JC
    PHILOSOPHICAL MAGAZINE B-PHYSICS OF CONDENSED MATTER STATISTICAL MECHANICS ELECTRONIC OPTICAL AND MAGNETIC PROPERTIES, 1988, 57 (02): : 259 - 269
  • [3] EFFECTS OF THE UNDOPED LAYER ON CHARACTERISTICS OF AMORPHOUS-SILICON SCHOTTKY DIODES
    HAN, MK
    ANDERSON, WA
    ONUMA, Y
    SUNG, P
    LAHRI, R
    COLEMAN, J
    ELECTRON DEVICE LETTERS, 1981, 2 (08): : 198 - 200
  • [4] FLICKER NOISE IN HYDROGENATED AMORPHOUS-SILICON SCHOTTKY DIODES.
    Bathaei, F.Z.
    Anderson, J.C.
    Philosophical Magazine B: Physics of Condensed Matter; Electronic, Optical and Magnetic Properties, 1988, 57 (02): : 259 - 269
  • [5] SWITCHING CHARACTERISTICS OF AMORPHOUS-SILICON SCHOTTKY-BARRIER DIODES
    NARA, Y
    KUDOU, Y
    MATSUMURA, M
    JOURNAL OF NON-CRYSTALLINE SOLIDS, 1983, 59-6 (DEC) : 1175 - 1178
  • [6] POSSIBLE QUANTUM EFFECTS IN AMORPHOUS-SILICON DOUBLE SCHOTTKY DIODES
    JAFAR, M
    HANEMAN, D
    PHYSICAL REVIEW B, 1993, 47 (16): : 10911 - 10914
  • [7] CAPACITANCE STUDIES ON AMORPHOUS-SILICON SCHOTTKY-BARRIER DIODES
    BEICHLER, J
    FUHS, W
    MELL, H
    WELSCH, HM
    JOURNAL OF NON-CRYSTALLINE SOLIDS, 1980, 35-6 (JAN-) : 587 - 592
  • [8] LIGHT-INDUCED EFFECTS IN SCHOTTKY DIODES ON HYDROGENATED AMORPHOUS-SILICON
    JOUSSE, D
    BASSET, R
    DELIONIBUS, S
    BOURDON, B
    APPLIED PHYSICS LETTERS, 1980, 37 (02) : 208 - 211
  • [9] THE CAPACITANCE OF RF SPUTTERED HYDROGENATED AMORPHOUS-SILICON, SCHOTTKY-BARRIER DIODES
    FERNANDEZCANQUE, HL
    ALLISON, J
    THOMPSON, MJ
    JOURNAL OF APPLIED PHYSICS, 1983, 54 (12) : 7025 - 7033
  • [10] EVIDENCE OF SPACE-CHARGE-LIMITED CURRENT IN AMORPHOUS-SILICON SCHOTTKY DIODES
    ASHOK, S
    LESTER, A
    FONASH, SJ
    ELECTRON DEVICE LETTERS, 1980, 1 (10): : 200 - 202
12345