NEW HOT-CARRIER DEGRADATION MODE AND LIFETIME PREDICTION METHOD IN QUARTER-MICROMETER PMOSFET

被引：34
|
作者：
TSUCHIYA, T
OKAZAKI, Y
MIYAKE, M
KOBAYASHI, T
机构：
[1] NTT LSI Laboratory, Atsugi, Kanagawa, 243-01
来源：
IEEE TRANSACTIONS ON ELECTRON DEVICES | 1992年 / 39卷 / 02期
关键词：
D O I：
10.1109/16.121700
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
Hot-carrier-induced device degradation has been studied for a quarter-micrometer level buried-channel PMOSFET's. It is found that the major hot-carrier degradation mode for these small devices is quite different from that previously reported, which was caused by trapped electrons injected into the gate oxide. The new degradation mode is caused by the effect of interface traps generated by hot hole injection into the oxide near the drain in the saturation region. DC device lifetime for the new mode can be evaluated using substrate current rather than gate current as a predictor. Interface-trap generation due to hot-hole injection will become the dominant degradation mode in future PMOSFET's
引用
收藏
页码：404 / 408
页数：5
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