EPITAXIAL-GROWTH OF MGO ON (100)GAAS USING ULTRAHIGH-VACUUM ELECTRON-BEAM EVAPORATION

被引：63

作者：

HUNG, LS ^{[1
]}

ZHENG, LR ^{[1
]}

BLANTON, TN ^{[1
]}

机构：

[1] EASTMAN KODAK CO,DIV ANALYT TECHNOL,ROCHESTER,NY 14652

来源：

APPLIED PHYSICS LETTERS | 1992年 / 60卷 / 25期

关键词：

D O I：

10.1063/1.106745

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Epitaxial layers of MgO grown on (NH4)xS-treated (100)GaAs substrates were prepared by electron-beam evaporation in an ultrahigh vacuum system without introducing additional oxygen. The films deposited at 500-degrees-C were found to grow with stoichiometric composition and have (110) planar orientation. X-ray pole-figure analysis showed that the [110BAR] direction in the MgO(110) plane is parallel to the [011BAR] direction in the GaAs (100) plane with a 4: 3 coincident site lattice. The film surface was smooth with no signs of structural defects or microcracks.

引用

页码：3129 / 3131

页数：3

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