EFFECTIVENESS OF CHARGED VACANCIES IN DIFFUSION OF IMPLANTED BORON IN SILICON

被引:2
|
作者
RUNOVC, F
机构
关键词
712 Electronic and Thermionic Materials;
D O I
10.1049/el:19800037
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
8
引用
收藏
页码:49 / 50
页数:2
相关论文
共 50 条
  • [31] ROLE OF RECOIL IMPLANTED OXYGEN IN DETERMINING BORON-DIFFUSION IN SILICON
    FAN, D
    JACCODINE, RJ
    JOURNAL OF APPLIED PHYSICS, 1990, 67 (10) : 6135 - 6140
  • [32] Diffusion simulation of ultra-low-energy implanted boron in silicon
    Uematsu, M
    JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS, 2000, 39 (9AB): : L895 - L897
  • [33] Reduced boron diffusion under interstitial injection in fluorine implanted silicon
    Kham, M. N.
    Matko, I.
    Chenevier, B.
    Ashburn, P.
    JOURNAL OF APPLIED PHYSICS, 2007, 102 (11)
  • [34] THE ROLE OF POINT-DEFECTS IN ANOMALOUS DIFFUSION OF IMPLANTED BORON IN SILICON
    BAO, XM
    GUO, Q
    HU, MS
    FENG, D
    JOURNAL OF APPLIED PHYSICS, 1989, 66 (03) : 1475 - 1477
  • [35] Multiflow boron diffusion in the surface region of ion-implanted silicon
    Bodnar, O.B.
    Zamalin, E.Yu.
    Mambetov, A.K.
    Physics, chemistry and mechanics of surfaces, 1995, 11 (7-8): : 868 - 872
  • [36] Reduced boron diffusion under interstitial injection in fluorine implanted silicon
    Kham, M.N.
    Matko, I.
    Chenevier, B.
    Ashburn, P.
    Journal of Applied Physics, 2007, 102 (11):
  • [37] DIFFUSION PROFILES OF BORON IMPLANTED INTO PLASMA-ETCHED SILICON SURFACES
    SHENAI, K
    IEEE TRANSACTIONS ON ELECTRON DEVICES, 1992, 39 (05) : 1242 - 1245
  • [38] EFFECT OF FLUORINE ON THE DIFFUSION OF THROUGH-OXIDE IMPLANTED BORON IN SILICON
    FAN, D
    PARKS, JM
    JACCODINE, RJ
    APPLIED PHYSICS LETTERS, 1991, 59 (10) : 1212 - 1214
  • [39] Boron diffusion in high-dose germanium-implanted silicon
    Kwok, KH
    Selvakumar, CR
    UNIVERSITY AND INDUSTRY - PARTNERS IN SUCCESS, CONFERENCE PROCEEDINGS VOLS 1-2, 1998, : 878 - 881
  • [40] Effect of fluorine on the activation and diffusion behavior of boron implanted preamorphized silicon
    Paul, S
    Lerch, W
    Colombeau, B
    Cowern, NEB
    Cristiano, F
    Boninelli, S
    Bolze, D
    JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 2006, 24 (01): : 437 - 441