SMALL-SIGNAL ADMITTANCE OF NONOSCILLATING BULK N-GAAS DIODES

被引：0

|

作者：

TSUKADA, T

HAMASAKI, J

机构：

来源：

ELECTRONICS & COMMUNICATIONS IN JAPAN | 1969年 / 52卷 / 03期

关键词：

D O I：

暂无

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

收藏

页码：90 / &

相关论文

共 50 条

[21] SMALL-SIGNAL THEORY OF FM ELECTROLUMINESCENT DIODES
KUCERA, L
MISEK, J
INTERNATIONAL JOURNAL OF ELECTRONICS, 1975, 38 (03) : 393 - 399
[22] Small-Signal Models for Impatt Diodes.
Kremer, Robert
1600, (29): : 7 - 8
[23] MEASUREMENT AND ANALYSIS OF SMALL-SIGNAL DRAIN ADMITTANCE IN SOS MOSFETS
HOWES, R
REDMANWHITE, W
ELECTRONICS LETTERS, 1991, 27 (24) : 2290 - 2292
[24] SMALL-SIGNAL MOSFET ONE-DIMENSIONAL ADMITTANCE MODEL
ZHANG, YM
DEMASSA, TA
SOLID-STATE ELECTRONICS, 1984, 27 (8-9) : 721 - 731
[25] COMPUTER-SIMULATION OF THE SMALL-SIGNAL ADMITTANCE AND NEGATIVE-RESISTANCE OF DOUBLE AVALANCHE REGION IMPATT DIODES
BANERJEE, JP
ROY, SK
APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING, 1993, 56 (06): : 575 - 580
[26] Interface states density distribution in Au/n-GaAs Schottky diodes on n-Ge and n-GaAs substrates
Hudait, MK
Krupanidhi, SB
MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY, 2001, 87 (02): : 141 - 147
[27] SMALL-SIGNAL AMPLIFICATION IN GAAS LASERS - GAAS LASER DIODES SMALL SIGNAL AMPLIFICATION TRAVELING WAVE AMPLIFICATION 77 DEGREES K E/T
CROWE, JW
CRAIG, RM
APPLIED PHYSICS LETTERS, 1964, 4 (03) : 57 - &
[28] MOTT BARRIER DIODES ON EPITAXIALLY GROWN N-GAAS
AVERIN, SV
AZATIAN, EA
GULIAEV, IV
DMITRIEV, MD
LIUBCHENKO, VE
PETRENKO, IV
SVESHNIKOV, IN
DOKLADY AKADEMII NAUK SSSR, 1984, 277 (05): : 1124 - 1130
[29] SMALL-SIGNAL ADMITTANCE OF INSULATOR N-TYPE GALLIUM-ARSENIDE INTERFACE REGION
QUAST, W
ELECTRONICS LETTERS, 1972, 8 (16) : 419 - &
[30] ANNEALING STUDIES ON PD/N-GAAS SCHOTTKY DIODES
SHARDA, H
PRASAD, K
FARAONE, L
NASSIBIAN, AG
SEMICONDUCTOR SCIENCE AND TECHNOLOGY, 1991, 6 (08) : 765 - 770

← 1 2 3 4 5 →