THE CHARACTERIZATION OF HIGH ELECTRON-MOBILITY TRANSISTORS USING SHUBNIKOV-DEHAAS OSCILLATIONS AND GEOMETRICAL MAGNETORESISTANCE MEASUREMENTS

被引：20
|
作者：
CHANG, CS
FETTERMAN, HR
VISWANATHAN, CR
机构：
来源：
JOURNAL OF APPLIED PHYSICS | 1989年 / 66卷 / 02期
关键词：
D O I：
10.1063/1.343522
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
引用
收藏
页码：928 / 936
页数：9
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