CHARGE CARRIER DYNAMIC NONEQUILIBRIUM IN AMORPHOUS-SEMICONDUCTORS

被引：5
|
作者：
FURLAN, J
机构：
[1] Fac of Electr & Comput Eng, Univ of Ljubljana
来源：
IEEE TRANSACTIONS ON ELECTRON DEVICES | 1992年 / 39卷 / 02期
关键词：
D O I：
10.1109/16.121706
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
Generation-recombination rates of free charge carriers in an amorphous semiconductor in dynamic nonequilibrium conditions are accompanied by corresponding rates of trapped carriers reflecting back the dynamic response of free carriers. Based on the SRH generation-recombination model the brief develops the analytical approach to a set of four differential equations describing the rates of change of free and trapped electrons and holes in thermal nonequilibrium conditions in amorphous semiconductors. These equations associated with continuity, Poisson, and transport equations provide the necessary analytical tools for the investigation of time dependence of charge carriers in amorphous semiconductors.
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页码：448 / 450
页数：3
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