ATOMIC LAYER EPITAXY OF INP

被引：19
|
作者：
BERTONE, D
机构：
[1] CSELT, Centro Studi e Laboratori Telecomunicazioni, Torino, 10148
来源：
JOURNAL OF ELECTRONIC MATERIALS | 1992年 / 21卷 / 03期
关键词：
ATOMIC LAYER EPITAXY; INP; SELECTIVE AREA EPITAXY;
D O I：
10.1007/BF02660452
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
In this work we will discuss the growth conditions for ALE of InP. Growth experiments were carried out in a LP-MOCVD system with a fast switch gas manifold. InP layers were deposited by pulsing TMIn and PH3, using Argon as carrier gas. A self limiting growth rate at 1 ML/cycle has been obtained with a substrate temperature as low as 320-360-degrees-C. InP epitaxial layers were grown on GaAs and InP substrates, and on GaInAs(P) layers previously deposited by conventional MOCVD. Selective area epitaxy on InP using a Si3N4 mask was also demonstrated. Results of this study are very encouraging for hybrid MOCVD/ALE growth of In-based compounds.
引用
收藏
页码：265 / 268
页数：4
相关论文
共 50 条
  • [41] ATOMIC-LAYER EPITAXY FOR HETEROSTRUCTURES
    BEDAIR, SM
    JOM-JOURNAL OF THE MINERALS METALS & MATERIALS SOCIETY, 1993, 45 (02): : 46 - 50
  • [42] ORDERED GAINP BY ATOMIC LAYER EPITAXY
    MCDERMOTT, BT
    ELMASRY, NA
    JIANG, BL
    HYUGA, F
    BEDAIR, SM
    DUNCAN, WM
    JOURNAL OF CRYSTAL GROWTH, 1991, 107 (1-4) : 96 - 101
  • [43] Atomic-layer-epitaxy of Si
    Ikeda, K
    Yanase, J
    Sugahara, S
    Matsumura, M
    JOURNAL OF THE KOREAN PHYSICAL SOCIETY, 2001, 39 : S447 - S458
  • [44] A MODEL FOR THE ATOMIC LAYER EPITAXY OF GAAS
    YU, ML
    THIN SOLID FILMS, 1993, 225 (1-2) : 7 - 11
  • [45] ATOMIC LAYER EPITAXY OF SI USING ATOMIC H
    IMAI, S
    IIZUKA, T
    SUGIURA, O
    MATSUMURA, M
    THIN SOLID FILMS, 1993, 225 (1-2) : 168 - 172
  • [46] MECHANISMS OF ATOMIC LAYER EPITAXY OF GAAS
    YU, ML
    JOURNAL OF APPLIED PHYSICS, 1993, 73 (02) : 716 - 725
  • [47] Morphology in electrochemical atomic layer epitaxy
    Varazo, K
    Wade, TL
    Flowers, BH
    Lay, MD
    Happek, U
    Stickney, JL
    THIN FILMS: PREPARATION, CHARACTERIZATION, APPLICATIONS, 2002, : 83 - 93
  • [48] Mechanism of atomic layer epitaxy of AlAs
    Hirose, S
    Yamaura, M
    Yoshida, A
    Ibuka, H
    Hara, K
    Munekata, H
    JOURNAL OF CRYSTAL GROWTH, 1998, 194 (01) : 16 - 24
  • [49] DEVELOPMENT CHALLENGES OF ATOMIC LAYER EPITAXY
    TUOMO, S
    ACTA POLYTECHNICA SCANDINAVICA-CHEMICAL TECHNOLOGY SERIES, 1990, (195): : 93 - 106
  • [50] USE OF TERTIARYBUTYLARSINE IN ATOMIC LAYER EPITAXY AND LASER-ASSISTED ATOMIC LAYER EPITAXY OF DEVICE QUALITY GAAS
    CHEN, Q
    BEYLER, CA
    DAPKUS, PD
    ALWAN, JJ
    COLEMAN, JJ
    APPLIED PHYSICS LETTERS, 1992, 60 (19) : 2418 - 2420
12345