ELECTRICAL CHARACTERIZATION OF INSITU AL-GASB SCHOTTKY DIODES GROWN BY MOLECULAR-BEAM EPITAXY

被引：10
|
作者：
POOLE, I
LEE, ME
SINGER, KE
机构：
[1] Dept. of Electron. and Electr. Eng., Univ. of Manchester, Inst. of Sci. and Technol.
来源：
SEMICONDUCTOR SCIENCE AND TECHNOLOGY | 1991年 / 6卷 / 09期
关键词：
18;
D O I：
10.1088/0268-1242/6/9/008
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
The electrical behaviour of epitaxial Al: GaSb Schottky diodes is modelled to highlight the importance of the effects of two-band electron conduction and recombination in the depletion region when deriving barrier heights from non-ideal I-V characteristics. The analysis reveals a Schottky barrier height to electrons in the GAMMA-conduction band minimum in the range 0.56 to 0.57 eV for n-type GaSb.
引用
收藏
页码：881 / 885
页数：5
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