共 50 条
- [31] HIGH-SPEED ENHANCEMENT MODE INP METAL-INSULATOR-SEMICONDUCTOR FIELD-EFFECT TRANSISTORS EXHIBITING VERY HIGH TRANSCONDUCTANCEAPPLIED PHYSICS LETTERS, 1986, 49 (09) : 513 - 515ANTREASYAN, AGARBINSKI, PAMATTERA, VDTEMKIN, H
- [32] ENHANCEMENT TYPE INP METAL-INSULATOR-SEMICONDUCTOR FIELD-EFFECT TRANSISTOR WITH PLASMA ANODIC ALUMINUM-OXIDE AS THE GATE INSULATORAPPLIED PHYSICS LETTERS, 1982, 40 (08) : 712 - 713HIRAYAMA, YPARK, HMKOSHIGA, FSUGANO, T
- [33] AN IMPROVED ANODIC OXIDE INSULATOR FOR INP METAL-INSULATED-SEMICONDUCTOR FIELD-EFFECT TRANSISTORSAPPLIED PHYSICS LETTERS, 1980, 37 (10) : 915 - 916LAUGHLIN, DHWILMSEN, CW
- [34] III-nitride metal-insulator-semiconductor heterojunction field-effect transistors using sputtered AlON thin filmsAPPLIED PHYSICS LETTERS, 2005, 86 (03) : 1 - 3Cai, YZhou, YGChen, KJLau, KM
- [35] FLUORIDE DIELECTRIC FILMS ON INP FOR METAL-INSULATOR-SEMICONDUCTOR APPLICATIONSJOURNAL OF APPLIED PHYSICS, 1990, 67 (08) : 3744 - 3749PAUL, TKBOSE, DN
- [36] EFFECT OF PYROLYTIC AL2O3 DEPOSITION TEMPERATURE ON INVERSION-MODE INP METAL-INSULATOR-SEMICONDUCTOR FIELD-EFFECT TRANSISTORJOURNAL OF APPLIED PHYSICS, 1981, 52 (10) : 6434 - 6436KOBAYASHI, TOKAMURA, MYAMAGUCHI, ESHINODA, YHIROTA, Y
- [38] ELECTRICAL CHARACTERISTICS AND PHOTOLYTIC TUNING OF POLY(3-HEXYLTHIOPHENE) THIN-FILM METAL-INSULATOR-SEMICONDUCTOR FIELD-EFFECT TRANSISTORS (MISFETS)CANADIAN JOURNAL OF PHYSICS, 1992, 70 (10-11) : 1171 - 1177XIE, ZABDOU, MSALU, XDEEN, MJHOLDCROFT, S
- [39] Electrical characteristics of AlGaN/GaN metal-insulator semiconductor heterostructure field-effect transistors on sapphire substratesJOURNAL OF ELECTRONIC MATERIALS, 2003, 32 (05) : 350 - 354Tan, WSHouston, PAHill, GAirey, RJParbook, PJ
- [40] Electrical characteristics of AlGaN/GaN metal-insulator semiconductor heterostructure field-effect transistors on sapphire substratesJournal of Electronic Materials, 2003, 32 : 350 - 354W. S. TanP. A. HoustonG. HillR. J. AireyP. J. Parbook