MULTIPLICATION PHENOMENON IN SILICON DETECTORS IRRADIATED WITH 0.5-1.5 MEV ELECTRONS

被引：0
|
作者：
NAKAMOTO, S [1 ]
AOKI, T [1 ]
机构：
[1] CHUBU INST TECHNOL,DEPT ENGN PHYS,KASUGAI,AICHI,JAPAN
来源：
JAPANESE JOURNAL OF APPLIED PHYSICS | 1974年 / 13卷 / 03期
关键词：
D O I：
10.1143/JJAP.13.567
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
引用
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页码：567 / 568
页数：2
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