ELECTRON-MICROSCOPY STUDY OF GAINAS INP AND GAINASP INP MULTILAYER HETEROSTRUCTURES

被引:0
|
作者
SPYCHER, R
BUFFAT, PA
STADELMANN, PA
ROENTGEN, P
HEUBERGER, W
GRAF, V
机构
关键词
D O I
暂无
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
引用
收藏
页码:299 / 304
页数:6
相关论文
共 50 条
  • [31] Growing of InP, GaInAs and GaInAsP by the Organometallic Method under Low Pressure.
    Razeghi, Manijeh
    Revue technique - Thomson-CSF, 1983, 15 (01): : 59 - 86
  • [32] MG INCORPORATION PROCESS DURING LP-MOVPE OF INP, GAINAS AND GAINASP
    VEUHOFF, E
    BAUMEISTER, H
    BRANDT, O
    TREICHLER, R
    JOURNAL OF CRYSTAL GROWTH, 1990, 105 (1-4) : 353 - 358
  • [33] TRANSMISSION ELECTRON-MICROSCOPY INSITU INVESTIGATION OF DISLOCATION MOBILITIES IN INP
    ZAFRANY, M
    VOILLOT, F
    PEYRADE, JP
    CAILLARD, D
    COURET, A
    COQUILLE, R
    PHILOSOPHICAL MAGAZINE A-PHYSICS OF CONDENSED MATTER STRUCTURE DEFECTS AND MECHANICAL PROPERTIES, 1992, 65 (01): : 195 - 206
  • [34] ATMOSPHERIC-PRESSURE OMVPE OF ABRUPT GAINAS/INP HETEROSTRUCTURES
    WANG, TY
    FRY, KL
    STRINGFELLOW, GB
    JOURNAL OF ELECTRONIC MATERIALS, 1987, 16 (04) : A25 - A25
  • [35] MBE growth of high-quality InP for GaInAs/InP heterostructures using incongruent evaporation of GaP
    Kunzel, H
    Bottcher, J
    Harde, P
    Maessen, R
    JOURNAL OF CRYSTAL GROWTH, 1997, 175 : 940 - 944
  • [36] MBE growth of high-quality InP for GaInAs/InP heterostructures using incongruent evaporation of GaP
    Heinrich-Hertz-Inst fuer, Nachrichtentechnik Berlin GmbH, Berlin, Germany
    J Cryst Growth, pt 2 (940-944):
  • [37] TRANSMISSION ELECTRON-MICROSCOPY STUDY OF MICRODEFECTS IN DISLOCATION-FREE GAAS AND INP CRYSTALS
    KAMEJIMA, T
    MATSUI, J
    SEKI, Y
    WATANABE, H
    JOURNAL OF APPLIED PHYSICS, 1979, 50 (05) : 3312 - 3321
  • [38] LP-MOCVD GROWTH AND CHARACTERIZATION OF UNDOPED AND MODULATION DOPED GAINASP-INP AND GAINAS/INP MULTI QUANTUM WELLS
    GRUTZMACHER, D
    MEYER, R
    ZACHAU, M
    HELGESEN, P
    ZRENNER, A
    WOLTER, K
    JURGENSEN, H
    KOCH, F
    BALK, P
    JOURNAL OF CRYSTAL GROWTH, 1988, 93 (1-4) : 382 - 388
  • [39] Growth and characterization of broad spectrum infrared emitting GaInAsP/InP heterostructures
    Rakovics, V.
    Nadas, J.
    Reti, I.
    Ducso, Cs.
    Battistig, G.
    JOURNAL OF CRYSTAL GROWTH, 2017, 468 : 572 - 575
  • [40] Measuring hybridization in GaInAs/InP electron billiard arrays
    Fairbanks, M. S.
    Martin, T. P.
    Scannell, B. C.
    Marlow, C. A.
    Linke, H.
    Taylor, R. P.
    PHYSICA E-LOW-DIMENSIONAL SYSTEMS & NANOSTRUCTURES, 2010, 42 (04): : 1205 - 1207