ELECTRON-MICROSCOPY STUDY OF GAINAS INP AND GAINASP INP MULTILAYER HETEROSTRUCTURES

被引：0
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作者：
SPYCHER, R
BUFFAT, PA
STADELMANN, PA
ROENTGEN, P
HEUBERGER, W
GRAF, V
机构：
来源：
MICROSCOPY OF SEMICONDUCTING MATERIALS 1989 | 1989年 / 100卷
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T [工业技术];
学科分类号：
08 ;
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页码：299 / 304
页数：6
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