THE NATURE OF TRAPS IN ANODIC OXIDE ON A GALLIUM-ARSENIDE SURFACE

被引:0
|
作者
ZOTEEV, AV
KASHKAROV, PK
OBRAZTSOV, AN
SOSNOVSKIKH, YN
SOROKIN, IN
机构
来源
VESTNIK MOSKOVSKOGO UNIVERSITETA SERIYA 3 FIZIKA ASTRONOMIYA | 1986年 / 27卷 / 05期
关键词
D O I
暂无
中图分类号
P1 [天文学];
学科分类号
0704 ;
摘要
引用
收藏
页码:53 / 57
页数:5
相关论文
共 50 条
  • [21] GALLIUM-ARSENIDE SURFACE BARRIER DETECTORS
    KOBAYASHI, T
    SUGITA, T
    NUCLEAR INSTRUMENTS & METHODS, 1972, 98 (01): : 179 - +
  • [22] GALLIUM-ARSENIDE SURFACE-COMPOSITION
    ALESHIN, VG
    GASSANOV, LG
    SEMASHKO, EM
    NEMOSHKALENKO, VV
    SENKEVICH, AI
    PROKOPENKO, VM
    VARCHENKO, NN
    DOPOVIDI AKADEMII NAUK UKRAINSKOI RSR SERIYA A-FIZIKO-MATEMATICHNI TA TECHNICHNI NAUKI, 1982, (07): : 54 - 57
  • [23] DIRECT CURRENT-VOLTAGE CHARACTERISTICS OF ANODIC OXIDE-FILMS ON GALLIUM-ARSENIDE
    WEIMANN, G
    THIN SOLID FILMS, 1977, 47 (02) : 127 - 135
  • [24] GALLIUM-ARSENIDE
    HARRISON, RJ
    OCCUPATIONAL MEDICINE-STATE OF THE ART REVIEWS, 1986, 1 (01): : 49 - 58
  • [25] GALLIUM-ARSENIDE
    THOMPSON, WL
    IRON AGE, 1983, 226 (03): : 8 - 8
  • [26] NATIVE OXIDE GLASSES FOR INDIUM GALLIUM-ARSENIDE
    GRODKIEWICZ, WH
    OBRYAN, HM
    PASTEUR, GA
    PRESSMAN, L
    SINGH, S
    VANUITERT, LG
    ZYDZIK, G
    MATERIALS RESEARCH BULLETIN, 1981, 16 (04) : 373 - 376
  • [27] NATURE OF CARRIER-DEPLETION LAYERS ON SURFACE OF GALLIUM-ARSENIDE IN MIS SYSTEMS
    SEMUSHKINA, NA
    MARAKHONOV, VM
    SEISYAN, RP
    SOVIET PHYSICS SEMICONDUCTORS-USSR, 1976, 10 (03): : 292 - 296
  • [28] OXIDE DISSOLUTION DURING THE ANODIZATION OF GALLIUM-ARSENIDE
    AYUPOV, BM
    SYSOEVA, NP
    BAKHTUROVA, LF
    FEDOROVA, ET
    SOVIET ELECTROCHEMISTRY, 1989, 25 (03): : 362 - 364
  • [29] MINORITY-CARRIER TRAPS IN EPITAXIAL GALLIUM-ARSENIDE PHOSPHIDE
    HENNING, ID
    THOMAS, H
    JOURNAL OF ELECTRONIC MATERIALS, 1981, 10 (02) : 361 - 377
  • [30] ELECTRICAL-PROPERTIES OF ANODIC AND PYROLYTIC DIELECTRICS ON GALLIUM-ARSENIDE
    ZEISSE, CR
    MESSICK, LJ
    LILE, DL
    JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1977, 14 (04): : 957 - 960