STRUCTURAL AND ELECTRON-TRANSPORT PROPERTIES OF CDS GROWN BY MOLECULAR-BEAM EPITAXY

被引:18
|
作者
CAMERON, DC
DUNCAN, W
TSANG, WM
机构
关键词
D O I
10.1016/0040-6090(79)90209-8
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
引用
收藏
页码:61 / 66
页数:6
相关论文
共 50 条
  • [41] WELL WIDTH DEPENDENCE OF ELECTRON-TRANSPORT IN MOLECULAR-BEAM EPITAXIALLY GROWN INAS/ALSB QUANTUM-WELLS
    BOLOGNESI, CR
    KROEMER, H
    ENGLISH, JH
    JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1992, 10 (02): : 877 - 879
  • [42] Electron-trap centers in ZnO layers grown by molecular-beam epitaxy
    Oh, DC
    Suzuki, T
    Kim, JJ
    Makino, H
    Hanada, T
    Cho, MW
    Yao, T
    APPLIED PHYSICS LETTERS, 2005, 86 (03) : 1 - 3
  • [43] TRANSPORT-PROPERTIES OF SELECTIVELY DOPED GAAS-(ALGA)AS HETEROSTRUCTURES GROWN BY MOLECULAR-BEAM EPITAXY
    HWANG, JCM
    KASTALSKY, A
    STORMER, HL
    KERAMIDAS, VG
    APPLIED PHYSICS LETTERS, 1984, 44 (08) : 802 - 804
  • [44] ELECTRON TRAPS IN INGAP GROWN BY GAS-SOURCE MOLECULAR-BEAM EPITAXY
    KIM, HS
    HAFICH, MJ
    PATRIZI, GA
    NANDA, A
    VOGT, TJ
    WOODS, LM
    ROBINSON, GY
    JOURNAL OF APPLIED PHYSICS, 1993, 74 (02) : 1431 - 1433
  • [45] STUDY OF ELECTRON TRAPS IN N-GAAS GROWN BY MOLECULAR-BEAM EPITAXY
    LANG, DV
    CHO, AY
    GOSSARD, AC
    ILEGEMS, M
    WIEGMANN, W
    JOURNAL OF APPLIED PHYSICS, 1976, 47 (06) : 2558 - 2564
  • [46] REDUCTION AND ORIGIN OF ELECTRON AND HOLE TRAPS IN GAAS GROWN BY MOLECULAR-BEAM EPITAXY
    CHAND, N
    SERGENT, AM
    VANDERZIEL, JP
    LANG, DV
    JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1989, 7 (02): : 399 - 404
  • [47] Compositional dependence of electron traps in Ga(As,N) grown by molecular-beam epitaxy
    Krispin, P
    Gambin, V
    Harris, JS
    Ploog, KH
    COMPOUND SEMICONDUCTORS 2002, 2003, 174 : 101 - 104
  • [48] Electrical transport properties of a nanorod GaN p-n homojunction grown by molecular-beam epitaxy
    Park, Young S.
    Park, Chang M.
    Lee, J. W.
    Cho, H. Y.
    Kang, T. W.
    Yoo, Kyung-Hwa
    Son, Min-Soo
    Han, Myung-Soo
    JOURNAL OF APPLIED PHYSICS, 2008, 103 (06)
  • [49] STRUCTURAL CHARACTERIZATION OF GAAS GROWN AT LOW-TEMPERATURES BY MOLECULAR-BEAM EPITAXY
    MATYI, RJ
    MELLOCH, MR
    ZHANG, K
    MILLER, DL
    JOURNAL OF PHYSICS D-APPLIED PHYSICS, 1995, 28 (4A) : A139 - A143
  • [50] DEEP ELECTRON TRAPS IN CDTE-IN FILMS GROWN BY MOLECULAR-BEAM EPITAXY
    ZAKRZEWSKI, AK
    DOBACZEWSKI, L
    KARCZEWSKI, G
    WOJTOWICZ, T
    KOSSUT, J
    ACTA PHYSICA POLONICA A, 1995, 88 (05) : 961 - 964