A SIMPLE SOURCE FOR UNIFORM AND REPRODUCIBLE DEPOSITION OF THE DOPANT SILICON IN III-V MOLECULAR-BEAM EPITAXY

被引：1
|
作者：
MILLER, DL
SULLIVAN, GJ
机构：
来源：
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B | 1987年 / 5卷 / 05期
关键词：
D O I：
10.1116/1.583620
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
引用
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页码：1377 / 1378
页数：2
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