FORMATION OF GALLIUM MICROINCLUSIONS IN GAAS MONOCRYSTALS

被引:0
|
作者
VASILENKO, ND
GORBATYUK, AY
MARONCHUK, IY
机构
来源
关键词
D O I
暂无
中图分类号
O4 [物理学];
学科分类号
0702 ;
摘要
引用
收藏
页码:32 / 35
页数:4
相关论文
共 50 条
  • [31] EFFECT OF TEMPERATURE FIELDS AND THERMAL-STRESSES ON FORMATION OF A DISLOCATIONAL STRUCTURE IN ARSENIDE AND GALLIUM MONOCRYSTALS DURING GROWTH ACCORDING TO CHOKHRALSKII METHOD
    AVDONIN, NA
    VAKHRAMEEV, SS
    SHCHELKIN, YF
    SMIRNOV, VA
    SAKHAROV, BA
    OSVENSKI.VB
    MILVIDSK.MG
    IZVESTIYA AKADEMII NAUK SSSR SERIYA FIZICHESKAYA, 1972, 36 (03): : 554 - +
  • [32] The origin of gallium desorption transients during AlGaAs/GaAs heterointerface formation by molecular beam epitaxy
    Mahalingam, K
    Dorsey, DL
    Evans, KR
    Venkat, R
    APPLIED PHYSICS LETTERS, 1997, 70 (23) : 3143 - 3145
  • [33] ZERO RESISTANCE IN A LONGITUDINAL MAGNETIC FIELD IN MONOCRYSTALS OF GALLIUM AT 4.2 DEGREES K
    YAHIA, J
    FOURNIER, E
    BULLETIN OF THE AMERICAN PHYSICAL SOCIETY, 1969, 14 (06): : 731 - &
  • [34] Investigation of crystalline structure defects in high-resistance monocrystals of gallium selenide
    Allakhverdiev, Kerim
    Bikbajevas, Vitalijus
    Grivickas, Vytautas
    Odrinski, Andrei
    Guseinova, Dilara
    Salaev, Eldar
    Tarasik, Mariya
    Fedotov, Alexander
    PRZEGLAD ELEKTROTECHNICZNY, 2010, 86 (07): : 208 - 210
  • [35] GALLIUM INTERSTITIALS IN GAAS ALAS SUPERLATTICES
    TROMBETTA, JM
    KENNEDY, TA
    TSENG, W
    GAMMON, D
    PHYSICAL REVIEW B, 1991, 43 (03): : 2458 - 2461
  • [36] APPLICATION OF STEPANOV METHOD FOR PREPARATION OF GALLIUM-ARSENIDE MONOCRYSTALS OF VARIOUS FORMS
    EGOROV, LP
    MILVIDSKII, MG
    ZATULOVSKII, LM
    KARATAEV, VV
    GULYAEV, VV
    BELOKON, SA
    OKUN, LS
    IZVESTIYA AKADEMII NAUK SSSR SERIYA FIZICHESKAYA, 1976, 40 (07): : 1359 - 1360
  • [37] QUANTITATIVE STUDY BY OPTICAL-ABSORPTION OF HOMOGENEITY OF MONOCRYSTALS OF GALLIUM-ARSENIDE
    LEYRAL, P
    BOIS, D
    PINARD, P
    JOURNAL OF SOLID STATE CHEMISTRY, 1973, 6 (03) : 406 - 410
  • [38] Modeling of point defect formation in silicon monocrystals
    Zabelin, VA
    Kalaev, VV
    MICROELECTRONIC ENGINEERING, 2003, 69 (2-4) : 641 - 645
  • [39] CAVITY AND PORE FORMATION IN GROWING OF COPPER MONOCRYSTALS
    FEHMER, H
    SCHUR, K
    UELHOFF, W
    MIKROSKOPIE, 1972, 27 (11-1) : 356 - &
  • [40] INFLUENCE OF THE MICROINCLUSIONS OF LOW-MELTING-POINT METALS ON THE RESIDUAL MECHANICAL STRAINS IN THE EPITAXIAL STRUCTURES OF GAAS
    VASILENKO, ND
    GORBATIUK, AY
    UKRAINSKII FIZICHESKII ZHURNAL, 1993, 38 (10): : 1583 - 1588