TEM AND PL IMAGING CHARACTERIZATION OF MOVPE GROWN MULTIPLE-QUANTUM-WELL LASER STRUCTURES WITH TENSILE-STRAINED GAXIN1-XAS WELLS

被引：2

作者：

ZHOU, X ^{[1
]}

CHARSLEY, P ^{[1
]}

SMITH, AD ^{[1
]}

BRIGGS, ATR ^{[1
]}

机构：

[1] BNR EUROPE LTD,HARLOW CM17 9NA,ESSEX,ENGLAND

来源：

ELECTRON MICROSCOPY AND ANALYSIS 1993 | 1993年 / 138期

关键词：

D O I：

10.1109/MWSYM.1993.276813

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

The microstructure of a series of four GaxIn1-xAs quantum well laser structures with tensile strains in the wells between 0% and 2% was studied by TEM and room temperature PL imaging. The strain which can be used for coherent layer growth is found to be below 1.5%, at or over which anisotropic lateral thickness modulation along the [110] direction was observed. The dark lines and spots observed by PL imaging were identified to bedislocation clusters along the [110] direction and threading dislocations with stacking faults, respectively.

引用

页码：321 / 324

页数：4

共 15 条

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