VACANCY ACCEPTOR COMPLEXES IN GERMANIUM PRODUCED BY ION-IMPLANTATION

被引：5
|
作者：
FEUSER, U
VIANDEN, R
ALVES, E
DASILVA, MF
SZILAGYI, E
PASZTI, F
SOARES, JC
机构：
[1] INST CIENCIAS & ENGN NUCL,LAB NACL ENGN & TECNOL IND,DEPT FIS,P-2685 SACAVEM,PORTUGAL
[2] HUNGARIAN ACAD SCI,CENT RES INST PHYS,H-1525 BUDAPEST,HUNGARY
[3] UNIV LISBON,CTR FIS NUCL,P-1699 LISBON,PORTUGAL
来源：
NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS | 1991年 / 59卷
关键词：
D O I：
10.1016/0168-583X(91)95762-3
中图分类号：
TH7 [仪器、仪表];
学科分类号：
0804 ; 080401 ; 081102 ;
摘要：
Combining results obtained by the gamma-gamma perturbed angular correlation method, Rutherford backscattering and elastic recoil detection of hydrogen, a defect complex formed in germanium by indium implantation is identified as a vacancy trapped by the indium probe.
引用
收藏
页码：1049 / 1052
页数：4
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