A RAMAN-SCATTERING STUDY ON THE INTERFACE SHARPNESS OF INAS/ALSB/GASB/ALSB POLYTYPE SUPERLATTICES GROWN BY MOLECULAR-BEAM EPITAXY

被引：6
|
作者：
YANO, M
UTATSU, T
IWAI, Y
INOUE, F
机构：
[1] New Materials Research Center, Osaka Institute of Technology, Osaka, 535, Asahi-ku Ohmiya
来源：
JOURNAL OF CRYSTAL GROWTH | 1995年 / 150卷 / 1-4期
关键词：
D O I：
10.1016/0022-0248(95)80063-I
中图分类号：
O7 [晶体学];
学科分类号：
0702 ; 070205 ; 0703 ; 080501 ;
摘要：
A Raman scattering study is performed for InAs/AlSb/GaSb/AlSb polytype superlattices grown by molecular beam epitaxy. To understand the unfavorable intermixing reaction at the heterointerface. the Raman signals are analyzed in conjunction with the MBE growth condition. For samples grown at low temperatures. it is confirmed that their heterointerfaces are sharply formed with a reasonable superlattice structure by analyzing the zone-folding and confinement effects of lattice vibrations in addition to the signals from the interface bond.
引用
收藏
页码：868 / 873
页数：6
相关论文
共 50 条
  • [41] RAMAN-SCATTERING CHARACTERIZATION OF INTERFACE BROADENING IN GAAS/ALAS SHORT-PERIOD SUPERLATTICES GROWN BY MOLECULAR-BEAM EPITAXY
    JUSSERAND, B
    ALEXANDRE, F
    PAQUET, D
    LEROUX, G
    APPLIED PHYSICS LETTERS, 1985, 47 (03) : 301 - 303
  • [42] Interfaces in InAs/GaSb Superlattices Grown by Molecular Beam Epitaxy
    Guo Jie
    Sun Wei-Guo
    Peng Zhen-Yu
    Zhou Zhi-Qiang
    Xu Ying-Qiang
    Niu Zhi-Chuan
    CHINESE PHYSICS LETTERS, 2009, 26 (04)
  • [43] MOLECULAR-BEAM EPITAXY OF GASB ALSB OPTICAL-DEVICE LAYERS ON SI(100)
    MALIK, RJ
    VANDERZIEL, JP
    LEVINE, BF
    BETHEA, CG
    WALKER, J
    JOURNAL OF APPLIED PHYSICS, 1986, 59 (11) : 3909 - 3911
  • [44] RAMAN-SCATTERING IN GASB/ALSB STRAINED-LAYER LATTICES
    SCHWARTZ, GP
    GUALTIERI, GJ
    SUNDER, WA
    FARROW, LA
    ASPNES, DE
    STUDNA, AA
    JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS, 1987, 5 (04): : 1500 - 1502
  • [45] STUDIES OF GASB-CAPPED INAS/ALSB QUANTUM-WELLS BY RESONANT RAMAN-SCATTERING
    WAGNER, J
    SCHMITZ, J
    MAIER, M
    RALSTON, JD
    KOIDL, P
    SOLID-STATE ELECTRONICS, 1994, 37 (4-6) : 1037 - 1040
  • [46] MOLECULAR-BEAM EPITAXY GROWTH AND CHARACTERIZATION OF GASB/ALSB STRAINED-LAYER SUPERLATTICES ON NONVICINAL (001) AND 111(B) GASB SUBSTRATES
    SCHWARTZ, GP
    GUALTIERI, GJ
    SUNDER, WA
    JOURNAL OF CRYSTAL GROWTH, 1990, 102 (1-2) : 147 - 156
  • [47] DEEP LEVELS IN TE-DOPED ALSB GROWN BY MOLECULAR-BEAM EPITAXY
    NAKAGAWA, A
    PEKARIK, JJ
    KROEMER, H
    ENGLISH, JH
    APPLIED PHYSICS LETTERS, 1990, 57 (15) : 1551 - 1553
  • [48] INFLUENCE OF [V]/[III]BEAM RATIO ON CRYSTAL QUALITIES OF GASB-ALSB SUPERLATTICE FILMS GROWN BY MOLECULAR-BEAM EPITAXY
    SUZUKI, Y
    OHMORI, Y
    OKAMOTO, H
    JOURNAL OF APPLIED PHYSICS, 1986, 59 (11) : 3760 - 3767
  • [49] RAMAN-SCATTERING STUDY OF THE INTERMIXING OF ALAS MONOLAYERS IN GAAS GROWN BY MOLECULAR-BEAM EPITAXY
    KATZER, DS
    SHANABROOK, BV
    GAMMON, D
    JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1994, 12 (02): : 1056 - 1058
  • [50] HIGH REFLECTIVITY 1.55 MU-M (AL)GASB/ALSB BRAGG MIRROR GROWN BY MOLECULAR-BEAM EPITAXY
    LAMBERT, B
    TOUDIC, Y
    ROUILLARD, Y
    BAUDET, M
    GUENAIS, B
    DEVEAUD, B
    VALIENTE, I
    SIMON, JC
    APPLIED PHYSICS LETTERS, 1994, 64 (06) : 690 - 691
12345