A RAMAN-SCATTERING STUDY ON THE INTERFACE SHARPNESS OF INAS/ALSB/GASB/ALSB POLYTYPE SUPERLATTICES GROWN BY MOLECULAR-BEAM EPITAXY

被引：6
|
作者：
YANO, M
UTATSU, T
IWAI, Y
INOUE, F
机构：
[1] New Materials Research Center, Osaka Institute of Technology, Osaka, 535, Asahi-ku Ohmiya
来源：
JOURNAL OF CRYSTAL GROWTH | 1995年 / 150卷 / 1-4期
关键词：
D O I：
10.1016/0022-0248(95)80063-I
中图分类号：
O7 [晶体学];
学科分类号：
0702 ; 070205 ; 0703 ; 080501 ;
摘要：
A Raman scattering study is performed for InAs/AlSb/GaSb/AlSb polytype superlattices grown by molecular beam epitaxy. To understand the unfavorable intermixing reaction at the heterointerface. the Raman signals are analyzed in conjunction with the MBE growth condition. For samples grown at low temperatures. it is confirmed that their heterointerfaces are sharply formed with a reasonable superlattice structure by analyzing the zone-folding and confinement effects of lattice vibrations in addition to the signals from the interface bond.
引用
收藏
页码：868 / 873
页数：6
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