Impact of proton implantation parameters on the photoconductivity of photorefractive multiple quantum wells

被引：0
|
作者：
Jablonski, Blazej [1 ]
Branecka, Agnieszka [1 ]
Miskiewicz, Eliza [1 ]
Ziolkowski, Andrzej [1 ]
Weinert-Raczka, Ewa [1 ]
机构：
[1] West Pomeranian Univ Technol Szczecin, Piastow 17, PL-70310 Szczecin, Poland
来源：
PHOTONICS LETTERS OF POLAND | 2015年 / 7卷 / 04期
关键词：
D O I：
10.4302/plp.2015.4.12
中图分类号：
O43 [光学];
学科分类号：
070207 ; 0803 ;
摘要：
Semi-insulating GaAs/AlGaAs multiple quantum wells are photorefractive materials with high sensitivity and short response time. Semi-insulation of these structures is commonly obtained by proton implantation. We present the measurements of photoconductivity in the samples with different proton doses. The results were compared to the theoretically predicted relationship between photoconductivity and the donor to acceptor concentration ratio. This allows to estimate the impact of proton dose on deep donor concentration.
引用
收藏
页码：121 / 123
页数：3
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