ELECTRONIC-STRUCTURE OF AMORPHOUS-SEMICONDUCTORS

被引：17

作者：

ADLER, D ^{[1
]}

机构：

[1] MIT,CTR MAT SCI & ENGN,CAMBRIDGE,MA 02139

来源：

JOURNAL OF NON-CRYSTALLINE SOLIDS | 1980年 / 42卷 / 1-3期

关键词：

D O I：

10.1016/0022-3093(80)90033-2

中图分类号：

TQ174 [陶瓷工业]; TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

引用

页码：315 / 333

页数：19

共 50 条

[21] ELECTRONIC PROPERTIES OF SUBSTITUTIONALLY DOPED AMORPHOUS-SEMICONDUCTORS
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THIN SOLID FILMS, 1979, 58 (02) : 299 - 299
[22] ELECTRONIC-PROPERTIES OF AMORPHOUS-SEMICONDUCTORS - AN INTRODUCTION
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[23] DEFECTS AND ASSOCIATED ELECTRONIC STATES IN AMORPHOUS-SEMICONDUCTORS
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[24] ELECTRONIC PROPERTIES AND LOCALIZED STATES IN AMORPHOUS-SEMICONDUCTORS
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[25] ELECTRONIC TRANSPORT IN HYDROGENATED AMORPHOUS-SEMICONDUCTORS - INTRODUCTION
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[26] SINGLE AND PAIR ELECTRONIC STATES IN AMORPHOUS-SEMICONDUCTORS
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[27] GROWTH AND STRUCTURE OF LAYERED AMORPHOUS-SEMICONDUCTORS
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[28] A CALCULATION OF THE DENSITY OF ELECTRONIC STATES FOR AMORPHOUS-SEMICONDUCTORS
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[29] ELECTRONIC BEHAVIORS OF GAP STATES IN AMORPHOUS-SEMICONDUCTORS
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[30] CALCULATING THE ELECTRONIC-PROPERTIES OF AMORPHOUS-SEMICONDUCTORS
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