NUMERICAL MODELING OF GAAS MOCVD

被引：0
|
作者：
COLTRIN, ME
KEE, RJ
机构：
[1] SANDIA NATL LABS, ALBUQUERQUE, NM 87185 USA
[2] SANDIA NATL LABS, LIVERMORE, CA 94550 USA
来源：
ABSTRACTS OF PAPERS OF THE AMERICAN CHEMICAL SOCIETY | 1991年 / 202卷
关键词：
D O I：
暂无
中图分类号：
O6 [化学];
学科分类号：
0703 ;
摘要：
引用
收藏
页码：66 / COLL
相关论文
共 50 条
  • [41] RESIDUAL GERMANIUM INCORPORATION IN MOCVD GROWN GAAS
    REED, AD
    LEE, B
    BOSE, SS
    STILLMAN, GE
    GALLIUM ARSENIDE AND RELATED COMPOUNDS 1988, 1989, : 165 - 168
  • [42] ATOMIC LAYER EPITAXY OF GAAS ON SI BY MOCVD
    KARAM, NH
    HAVEN, VE
    VERNON, SM
    TRAN, JC
    ELMASRY, NA
    III-V HETEROSTRUCTURES FOR ELECTRONIC / PHOTONIC DEVICES, 1989, 145 : 331 - 336
  • [43] Selective epitaxial growth of GaAs on Ge by MOCVD
    Brammertz, Guy
    Mols, Yves
    Degroote, Stefan
    Leys, Maarten
    Van Steenbergen, Jan
    Borghs, Gustaaf
    Caymax, Matty
    JOURNAL OF CRYSTAL GROWTH, 2006, 297 (01) : 204 - 210
  • [44] DEEP LEVELS IN GAAS ON SI GROWN BY MOCVD
    HOFMANN, DM
    AKIYAMA, M
    IKOMA, T
    INSTITUTE OF PHYSICS CONFERENCE SERIES <D>, 1989, (96): : 227 - 231
  • [45] Growth of GaAs in a rotating disk MOCVD reactor
    Thompson, A.G, 1600, (94):
  • [46] A STUDY OF SILICON INCORPORATION IN GAAS MOCVD LAYERS
    VEUHOFF, E
    KUECH, TF
    MEYERSON, BS
    JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1985, 132 (08) : 1958 - 1961
  • [47] CHARACTERIZATION OF A GAAS/HGCDTE INTERFACE FORMED BY MOCVD
    ROSSOUW, CJ
    GLANVILL, SR
    KWIETNIAK, MS
    PAIN, GN
    WARMINSKI, T
    WILSON, IJ
    JOURNAL OF CRYSTAL GROWTH, 1988, 93 (1-4) : 937 - 938
  • [48] MORPHOLOGY OF GAAS EPITAXIAL LAYERS GROWN BY MOCVD
    MORI, H
    TAKAGISHI, S
    JOURNAL OF CRYSTAL GROWTH, 1984, 69 (01) : 23 - 28
  • [49] DEEP LEVELS IN GAAS ON SI GROWN BY MOCVD
    HOFMANN, DM
    AKIYAMA, M
    IKOMA, T
    GALLIUM ARSENIDE AND RELATED COMPOUNDS 1988, 1989, : 227 - 231
  • [50] MOCVD制备GaAlAs/GaAs和GaSb/GaAs超晶格结构
    黄柏标
    徐现刚
    刘士文
    刘立强
    蒋民华
    人工晶体学报, 1991, (Z1) : 332 - 332
12345