STACKING FAULT ENERGY OF SOME COPPER SILICON ALLOYS

The composition and temperature dependence of the stacking fault energy in a series of dilute Cu-Si alloys was measured using extended node techniques, texture measurements, and X-ray fault probability measurements. The node and fault probability measurements indicate a smooth decrease in stacking fault energy with silicon content between 0 and 6.9 at. % silicon. Texture measurements indicate a maximum in the stacking fault energy-composition curve at low silicon contents but this is probably due to some factor other than a true increase in fault energy. Using node measurements the stacking fault energy in the Cu-6.9% Si alloy was observed to irreversibly increase slightly when heating to temperatures above 300°C. © 1969.