CHARACTERISTIC OPERATIONS OF HIGH-RESISTIVITY GAAS OSCILLATORS

被引：9

|

作者：

TOKUMARU, Y

MIKOSHIBA, N

机构：

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS | 1972年 / 11卷 / 05期

关键词：

D O I：

10.1143/JJAP.11.678

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

收藏

页码：678 / +

页数：1

相关论文

共 50 条

[41] ON HIGH-RESISTIVITY IN QUASI CRYSTAL
CYROT, M
CYROTLACKMANN, F
ZEITSCHRIFT FUR PHYSIKALISCHE CHEMIE NEUE FOLGE, 1988, 157 : 823 - 830
[42] HIGH-RESISTIVITY ZNO FILMS
SRIVASTAVA, JK
AGARWAL, L
BHATTACHARYYA, AB
JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1988, 135 (08) : C395 - C396
[43] Corrosion in high-resistivity soils
不详
MATERIALS PERFORMANCE, 2004, 43 (09) : 28 - 28
[44] CONTACTING N-TYPE HIGH RESISTIVITY GAAS FOR GUNN OSCILLATORS
RAMACHANDRAN, TB
SANTOSUOSSO, RP
SOLID-STATE ELECTRONICS, 1966, 9 (07) : 733 - +
[45] HIGH-RESISTIVITY AND PICOSECOND CARRIER LIFETIME OF GAAS IMPLANTED WITH MEV GA IONS AT HIGH FLUENCES
JAGADISH, C
TAN, HH
JASINSKI, J
KAMINSKA, M
PALCZEWSKA, M
KROTKUS, A
MARCINKEVICIUS, S
APPLIED PHYSICS LETTERS, 1995, 67 (12) : 1724 - 1726
[46] INFLUENCE OF INHOMOGENEITY OF THE ABSORPTION OF SIGNAL RADIATION ON THE FREQUENCY CHARACTERISTIC OF A HIGH-RESISTIVITY EXTRINSIC PHOTORESISTOR
BLOKHIN, IK
KHOLODNOV, VA
SOVIET PHYSICS SEMICONDUCTORS-USSR, 1992, 26 (04): : 417 - 420
[47] LOW-FREQUENCY CURRENT OSCILLATIONS OBSERVED WITH HIGH-RESISTIVITY NONOHMIC GAAS DEVICES
KAMAN, R
GRANT, R
JASKOLSKI, SV
ELECTRONICS LETTERS, 1971, 7 (13) : 373 - +
[48] MECHANISM OF PHOTOCONDUCTIVITY IN HIGH-RESISTIVITY CR-DOPED GAAS SINGLE-CRYSTALS
BUBE, RH
LIN, AL
BULLETIN OF THE AMERICAN PHYSICAL SOCIETY, 1975, 20 (03): : 404 - 404
[49] DEEP-LEVEL DEFECTS IN HIGH-RESISTIVITY GAAS GROWN BY THE HORIZONTAL BRIDGMAN TECHNIQUE
JORDAN, M
LINDE, M
HANGLEITER, T
SPAETH, JM
SEMICONDUCTOR SCIENCE AND TECHNOLOGY, 1992, 7 (06) : 731 - 737
[50] LIGHT-BEAM GENERATED SURFACE ACOUSTIC-WAVES IN HIGH-RESISTIVITY GAAS
STELINA, J
KOSTIAL, P
PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE, 1992, 130 (01): : K31 - K34

← 1 2 3 4 5 →